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2SC5337 Arkusz danych(PDF) 4 Page - NEC

Numer części 2SC5337
Szczegółowy opis  NPN EPITAXIAL SILICON TRANSISTOR HIGH FREQUENCY LOW DISTORTION AMPLIFIER
PDF  8 Pages
Scroll/Zoom Zoom In 100%  Zoom Out
Producent  NEC [NEC]
Strona internetowa  http://www.nec.com/
Logo NEC - NEC

2SC5337 Arkusz danych(HTML) 4 Page - NEC

  2SC5337 Datasheet HTML 1Page - NEC 2SC5337 Datasheet HTML 2Page - NEC 2SC5337 Datasheet HTML 3Page - NEC 2SC5337 Datasheet HTML 4Page - NEC 2SC5337 Datasheet HTML 5Page - NEC 2SC5337 Datasheet HTML 6Page - NEC 2SC5337 Datasheet HTML 7Page - NEC 2SC5337 Datasheet HTML 8Page - NEC  
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VCE - Collector to Emitter Voltage - V
DC CURRENT GAIN vs.
COLLECTOR CURRENT
IC - Collector Current - mA
VCB - Collector to Bese Voltage - V
f = 1.0 MHZ
IC - Collector Current - mA
IC - Collector Current - mA
f - Frequency - GHZ
S21e 2
MAG
VCE = 10 V
IC = 50 mA
FEED-BACK CAPACITANCE vs.
COLLECTOR TO BASE VOLTAGE
INSERTION POWER GAIN vs.
COLLECTOR CURRENT
INSERTION POWER GAIN
MAXIMUM AVAILABLE GAIN vs. FREQUENCY
VCE = 10 V
IB = 0.6 mA
0.5 mA
0.4 mA
0.3 mA
0.2 mA
0.1 mA
VCE = 10 V
f = 1 GHZ
VCE = 10 V
f = 1 GHZ
COLLECTOR CURRENT vs.
COLLECTOR TO EMITTER VOLTAGE
GAIN BANDWIDTH PRODUCT vs.
COLLECTOR CURRENT



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