| Zakładka z wyszukiwarką danych komponentów |
|
SV1020M Arkusz danych(PDF) 2 Page - Dynex Semiconductor |
|
|
|||||||||||||||||||||||||||||
SV1020M Arkusz danych(HTML) 2 Page - Dynex Semiconductor |
|
2 / 7 page ![]() SV10 2/7 SURGE RATINGS Conditions 10ms half sine; T case = 175 oC V R = 50% VRRM - 1/4 sine 10ms half sine; T case =175 oC V R = 0 Max. Units Symbol Parameter I FSM Surge (non-repetitive) forward current I 2tI2t for fusing I FSM Surge (non-repetitive) forward current I 2t I 2t for fusing A 2s 2.2 kA 14.9 x 103 A2s 1.76 kA 24.0 x 10 3 THERMAL AND MECHANICAL DATA Conditions Min. Max. Units oC/W - 0.08 Thermal resistance - case to heatsink R th(c-h) Thermal resistance - junction to case R th(j-c) Symbol Parameter - 0.23 oC/W 175 oC T vj Virtual junction temperature T stg Storage temperature range -55 200 oC - - 175 oC Mounting torque 15.0Nm with mounting compound On-state (conducting) Reverse (blocking) dc Mounting Torque - 12.0 15.0 Nm CHARACTERISTICS Forward voltage Peak reverse current Parameter µC - Q S Total stored charge Symbol V FM I RRM I RM Peak recovery current 100* - A 300* At V RRM, Tcase = 175 oC- 20 mA - 1.5 V At 300A peak, T case = 25 oC Conditions Typ. Max. Units At T vj = 175˚C - V TO Threshold voltage r T Slope resistance 1.3 m Ω At T vj = 175˚C - 1.1 V t rr reverse recovery time 6.5* - µs I F = 100A, dIRR/dt = 20A/µs, Tcase = 25˚C *Typical values. |
|
|
Link URL |
| Czy Alldatasheet okazała się pomocna? [ DONATE ] |
O Alldatasheet | Reklama | Kontakt | Polityka prywatności | Link do karty katalogowej | Linki | Lista producentów All Rights Reserved©Alldatasheet.com |
| Russian : Alldatasheetru.com | Korean : Alldatasheet.co.kr | Spanish : Alldatasheet.es | French : Alldatasheet.fr | Italian : Alldatasheetit.com Portuguese : Alldatasheetpt.com | Polish : Alldatasheet.pl | Vietnamese : Alldatasheet.vn Indian : Alldatasheet.in | Mexican : Alldatasheet.com.mx | British : Alldatasheet.co.uk | New Zealand : Alldatasheet.co.nz |
|
Family Site : ic2ic.com |
icmetro.com |