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SSP7404NA Arkusz danych(PDF) 2 Page - SeCoS Halbleitertechnologie GmbH

Numer części SSP7404NA
Szczegółowy opis  N-Channel Enhancement MOSFET
PDF  4 Pages
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Producent  SECOS [SeCoS Halbleitertechnologie GmbH]
Strona internetowa  http://www.secosgmbh.com
Logo SECOS - SeCoS Halbleitertechnologie GmbH

SSP7404NA Arkusz danych(HTML) 2 Page - SeCoS Halbleitertechnologie GmbH

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Elektronische Bauelemente
SSP7404NA
35A, 30V, RDS(ON) 2.8 mΩ
Ω
Ω
Ω
N-Channel Enhancement MOSFET
30-Dec-2013 Rev. A
Page 2 of 4
http://www.SeCoSGmbH.com/
Any changes of specification will not be informed individually.
ELECTRICAL CHARACTERISTICS (TA=25°C unless otherwise specified)
Parameter
Symbol
Min
Typ
Max
Unit
Test conditions
Static
Gate-Threshold Voltage
VGS(th)
1
-
-
V
VDS=VGS, ID=250µA
Gate-Body Leakage
IGSS
-
-
±100
nA
VDS=0, VGS= ±20V
-
-
1
VDS=24V, VGS=0
Zero Gate Voltage Drain Current
IDSS
-
-
25
µA
VDS=24V, VGS=0,TJ=55°C
On-State Drain Current
1
ID(ON)
50
-
-
A
VDS=5V, VGS=10V
-
-
2.8
VGS=10V, ID=20A
Drain-Source On-Resistance
1
RDS(ON)
-
-
4
m
VGS=4.5V, ID=16A
Forward Transconductance
1
gFS
-
26
-
S
VDS=15V,,ID=20A
Diode Forward Voltage
VSD
-
0.73
-
V
IS=3.7A, VGS=0
Dynamic
2
Total Gate Charge
Qg
-
64
-
Gate-Source Charge
Qgs
-
17
-
Gate-Drain Charge
Qgd
-
32
-
nC
ID=20A
VDS=15V
VGS=4.5V
Turn-On Delay Time
Td(ON)
-
17
-
Rise Time
Tr
-
28
-
Turn-Off Delay Time
Td(OFF)
-
168
-
Fall Time
Tf
-
65
-
nS
ID=20A, VDS=15V
VGEN=10V
RL=0.8 , RGEN=6
Input Capacitance
Ciss
-
13001
-
Output Capacitance
Coss
-
966
-
Reverse Transfer Capacitance
Crss
-
939
-
pF
VDS=15V, VGS=0, f=1MHz
Notes:
1.
Pulse test：PW ≦ 300 us duty cycle ≦ 2%.
2.
Guaranteed by design, not subject to production testing.



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