SSP7490N datasheet(1/4 Pages) SECOS

Numer części	SSP7490N

Szczegółowy opis	N-Channel Enhancement MOSFET

PDF	4 Pages

Scroll/Zoom	100%

Producent	SECOS [SeCoS Halbleitertechnologie GmbH]

Strona internetowa	http://www.secosgmbh.com

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1 / 4 page

Elektronische Bauelemente

SSP7490N

8.3A, 150V, RDS(ON) 48 mΩ

Ω

N-Channel Enhancement MOSFET

30-Dec-2013 Rev. A

Page 1 of 4

http://www.SeCoSGmbH.com/

Any changes of specification will not be informed individually.

RoHS Compliant Product

A suffix of “-C” specifies halogen & lead-free

FEATURES

Low RDS(on) trench technology.

Low thermal impedance.

Fast switching speed.

APPLICATIONS

White LED boost converters.

Automotive Systems.

Industrial DC/DC Conversion Circuits.

PACKAGE INFORMATION

Package

MPQ

Leader Size

SOP-8PP

3K

13 inch

ABSOLUTE MAXIMUM RATINGS(TA=25°C unless otherwise specified)

Parameter

Symbol

Rating

Unit

Drain-Source Voltage

VDS

150

V

Gate-Source Voltage

VGS

±20

V

TA=25°C

8.3

Continuous Drain Current

1

TA=70°C

ID

6.7

A

Pulsed Drain Current

2

IDM

50

A

Continuous Source Current (Diode Conduction)

1

IS

7.1

A

TA=25°C

5

Power Dissipation

1

TA=70°C

PD

3.2

W

Operating Junction and Storage Temperature Range

TJ, TSTG

-55~150

°C

Thermal Resistance Data

t≦10 sec

25

Maximum Junction to Ambient

1

Steady State

RθJA

65

°C / W

Notes:

1.

Surface Mounted on 1” x 1” FR4 Board.

2.

Pulse width limited by maximum junction temperature.

Millimeter

REF.

Min.

Max.

REF.

Min.

Max.

A

0.85

1.00

θ

0

°

10

°

B

5.40

5.60

b

5.10

5.30

C

0.15

0.25

c

0.30

0.50

D

3.71

3.91

d

1.27BSC

E

5.95

6.15

e

5.45

5.65

F

0.08

0.24

f

0.20

0.35

G

4.25

4.45

g

1.10

-

SOP-8PP

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