SSRF06N60SL datasheet(1/5 Pages) SECOS

Numer części	SSRF06N60SL

Szczegółowy opis	N-Ch Enhancement Mode Power MOSFET

PDF	5 Pages

Scroll/Zoom	100%

Producent	SECOS [SeCoS Halbleitertechnologie GmbH]

Strona internetowa	http://www.secosgmbh.com

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Elektronische Bauelemente

SSRF06N60SL

6A , 600V , RDS(ON) 1.5

N-Ch Enhancement Mode Power MOSFET

25-Sep-2013 Rev. A

Page 1 of 5

http://www.SeCoSGmbH.com/

Any changes of specification will not be informed individually.

ITO-220

RoHS Compliant Product

A suffix of “-C” specifies halogen free

DESCRIPTION

The SSRF06N60SL is the highest performance trench

N-ch MOSFETs with extreme high cell density , which provide

excellent RDS(on) and gate charge for most of the synchronous

buck converter applications .

FEATURES

Advanced high cell density Trench technology

Super Low Gate Charge

Excellent CdV/dt effect decline

100% EAS Guaranteed

Green Device Available

ABSOLUTE MAXIMUM RATINGS (TA=25°C unless otherwise specified)

Parameter

Symbol

Rating

Unit

Drain-Source Voltage

VDS

600

V

Gate-Source Voltage

VGS

±30

V

TC=25°C

6

A

Continuous Drain Current

TC=100°C

ID

3.8

A

Pulsed Drain Current

IDM

24

A

TC=25°C

42

Total Power Dissipation

Derate above 25°C

PD

0.34

W

Single Pulse Avalanche Energy

1

EAS

343

mJ

Operating Junction and Storage Temperature Range

TJ, TSTG

-55~150

°C

Thermal Resistance Rating

Maximum Thermal Resistance Junction-Ambient

RθJA

120

°C / W

Maximum Thermal Resistance Junction-Case

RθJC

2.98

°C / W

Notes:

1. L=30mH,IAS=4.4A, VDD=105V, RG=25 , Starting TJ =25°C

1

Gate

3

Source

2

Drain

A

M

J

K

L

G

F

B

N

D

E

C

H

Millimeter

REF.

Min.

Max.

REF.

Min.

Max.

A

14.60

16.50

H

2.70

4.00

B

9.50

10.50

J

0.90

1.50

C

12.60

14.00

K

0.50

0.95

D

4.30

5.10

L

2.34

2.74

E

2.30

3.2

M

2.40

3.60

F

2.30

3.10

N

φ 3.0

φ 3.4

G

0.30

0.75

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