STT3808NE datasheet(2/4 Pages) SECOS

2 / 4 page

Elektronische Bauelemente

STT3808NE

6A , 20V , RDS(ON) 20 mΩ

Ω

N-Channel Enhancement Mode Mos.FET

18-Oct-2013 Rev. A

Page 2 of 4

http://www.SeCoSGmbH.com/

Any changes of specification will not be informed individually.

ELECTRICAL CHARACTERISTICS

Parameter

Symbol

Min.

Typ.

Max.

Unit

Test Conditions

Gate- Source Threshold Voltage

VGS(th)

0.4

VDS=VGS, ID=250µA

Gate-Body Leakage

IGSS

±10

VDS=0, VGS= ±8V

VDS=16V, VGS=0 V

Zero Gate Voltage Drain Current

IDSS

µA

VDS=16V, VGS=0 V, TJ= 85°C

On-State Drain Current

ID(on)

VDS =5V, VGS=4.5V

VGS=4.5V, ID=6A

Drain-Source On-Resistance

RDS(ON)

VGS=2.5V, ID=5A

Forward Transconductance

gfs

VDS=15V, ID=6A

Diode Forward Voltage

VSD

0.7

IS=1A, VGS=0V

Dynamic

Total Gate Charge

13.5

Gate-Source Charge

Qgs

0.9

Gate-Drain Charge

Qgd

5.4

VDS=10V,

VGS=4.5V,

ID=6A

Turn-on Delay Time

Td(on)

Rise Time

Turn-off Delay Time

Td(off)

Fall Time

VDD=10V,

VGEN=4.5V,

RGEN=6 ,

RL=10 ,

ID=1A

Input Capacitance

Ciss

680

Output Capacitance

Coss

144

Reverse Transfer Capacitance

Crss

137

VDS = 10 V,

VGS = 0 V,

f = 1 MHz

Notes

1. Pulse test：PW≦300µs duty cycle≦2%.

2. Guaranteed by design, not subject to production testing.

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