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Any changes of specification will not be informed individually.

Elektronische Bauelemente

SCG4153

Ω

Ω

Ω

N-Channel Enhancement Mode MOSFET

12-Mar-2013 Rev. A

Page 2 of 4

THERMAL RESISTANCE RATINGS

Note:

1. Surface mounted on FR4 Board using 1 square inch pad size, 1oz copper.

2. Surface mounted on FR4 board using minimum pad size, 1oz copper

3. Repetitive rating, pulse width limited by junction temperature, tp=10µs, Duty Cycle=1%

Parameter

Symbol

Min.

Typ.

Max.

Unit

Teat Conditions

Static

Drain-Source Breakdown Voltage

20

-

-

V

Zero Gate Voltage Drain Current

-

-

1

µA

Gate-Source Leakage

-

-

±5

µA

Gate-Threshold Voltage

0.45

0.55

1

V

-

220

310

-

260

360

Drain-Source On Resistance

-

320

460

m

Forward Transconductance

-

1

-

S

Body-Drain Diode Ratings

Diode Forward On–Voltage

0.5

0.7

1.5

V

Dynamic Characteristics

Input Capacitance

-

68

-

Output Capacitance

-

9

-

Reverse Transfer Capacitance

-

7.5

-

pF

f=100KHz

Total Gate Charge

-

1.15

-

Threshold Gate Charge

-

0.06

-

Gate-to-Source Charge

-

0.15

-

Gate-to-Drain Charge

-

0.23

-

nC

Turn-on Delay Time

-

22

-

Rise Time

-

80

-

Turn-off Delay Time

-

700

-

Fall Time

-

380

-

nS

Rating

Parameter

Symbol

Typ.

Max.

Unit

T≦10S

285

335

Junction-to-Ambient Thermal Resistance

1

Steady State

340

405

T≦10S

385

450

Junction-to-Ambient Thermal Resistance

2

Steady State

455

545

Junction-to-Case Thermal Resistance

Steady State

260

300

°C / W