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LP6836P70 Arkusz danych(PDF) 2 Page - Filtronic Compound Semiconductors |
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LP6836P70 Arkusz danych(HTML) 2 Page - Filtronic Compound Semiconductors |
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2 / 3 page ![]() LP6836P70 PACKAGED MEDIUM POWER PHEMT Phone: (408) 988-1845 http:// www.filss.com Revised: 1/22/01 Fax: (408) 970-9950 Email: sales@filss.com • ABSOLUTE MAXIMUM RATINGS Parameter Symbol Test Conditions Min Max Units Drain-Source Voltage VDS TAmbient = 22 ± 3 °C 7 V Gate-Source Voltage VGS TAmbient = 22 ± 3 °C -4 V Drain-Source Current IDS TAmbient = 22 ± 3 °C IDSS mA Gate Current IG TAmbient = 22 ± 3 °C 18 mA RF Input Power PIN TAmbient = 22 ± 3 °C 150 mW Channel Operating Temperature TCH TAmbient = 22 ± 3 °C 175 ºC Storage Temperature TSTG — -65 175 ºC Total Power Dissipation PTOT TAmbient = 22 ± 3 °C 1.0 W Notes: • Operating conditions that exceed the Absolute Maximum Ratings could result in permanent damage to the device. • Power Dissipation defined as: PTOT ≡ (PDC + PIN) – POUT, where PDC: DC Bias Power PIN: RF Input Power POUT: RF Output Power • Absolute Maximum Power Dissipation to be de-rated as follows above 25 °C: PTOT= 1.0W – (.0036W/°C) x THS where THS = heatsink or ambient temperature. • This PHEMT is susceptible to damage from Electrostatic Discharge. Proper precautions should be used when handling these devices. • HANDLING PRECAUTIONS To avoid damage to the devices care should be exercised during handling. Proper Electrostatic Discharge (ESD) precautions should be observed at all stages of storage, handling, assembly, and testing. These devices should be treated as Class 1A (0-500 V). Further information on ESD control measures can be found in MIL-STD-1686 and MIL-HDBK-263. • APPLICATIONS NOTES & DESIGN DATA Applications Notes are available from your local Filtronic Sales Representative or directly from the factory. Complete design data, including S-parameters, noise data, and large-signal models are available on the Filtronic web site. |
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