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FMMT591ATC Arkusz danych(PDF) 4 Page - Diodes Incorporated |
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FMMT591ATC Arkusz danych(HTML) 4 Page - Diodes Incorporated |
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4 / 7 page ![]() FMMT591A Document number: DS33105 Rev. 5 - 2 4 of 7 www.diodes.com December 2013 © Diodes Incorporated FMMT591A A Product Line of Diodes Incorporated Electrical Characteristics (@TA = +25°C, unless otherwise specified.) Characteristic Symbol Min Typ Max Unit Test Condition Collector-Base Breakdown Voltage BVCBO -40 ⎯ ⎯ V IC = -100μA Collector-Emitter Breakdown Voltage (Note 9) BVCEO -40 ⎯ ⎯ V IC = -10mA Emitter-Base Breakdown Voltage BVEBO -7 ⎯ ⎯ V IE = -100μA Collector Cutoff Current ICBO ⎯ ⎯ -100 nA VCB = -30V Collector-Emitter Cutoff Current ICES ⎯ ⎯ -100 nA VCES = -30V Emitter Cutoff Current IEBO ⎯ ⎯ -100 nA VEB = -5.6V Collector-Emitter Saturation Voltage (Note 9) VCE(sat) ⎯ ⎯ ⎯ ⎯ -200 -350 -500 mV IC = -100mA, IB = -1mA IC = -500mA, IB = -20mA IC = -1A, IB = -100mA Base-Emitter Saturation Voltage (Note 9) VBE(sat) ⎯ ⎯ -1.1 V IC = -1A, IB = -100mA Base-Emitter Turn-On Voltage (Note 9) VBE(on) ⎯ ⎯ -1.0 V IC = -1A, VCE = -5V Static Forward Current Transfer Ratio (Note 9) hFE 300 300 250 160 30 ⎯ ⎯ 800 ⎯ ⎯ ⎯ ⎯ IC = -1mA, VCE = -5V IC = -100mA, VCE = -5V IC = -500mA, VCE = -5V IC = -1A, VCE = -5V IC = -2A, VCE = -5V Transition Frequency fT 150 00 ⎯ MHz VCE = -10V, IC = -50mA, f = 100MHz Output Capacitance Cobo ⎯ ⎯ 10 pF VCB = -10V, f = 1MHz Switching Time Delay Time t(d) ⎯ 34.9 ⎯ ns VCC = -10V, IC = -500mA, IB1 = -IB2 =-25mA Rise Time t(r) ⎯ 19.2 ⎯ Storage Time t(s) ⎯ 249 ⎯ Fall Time t(f) ⎯ 62 ⎯ Note: 9. Measured under pulsed conditions. Pulse width ≤ 300µs. Duty cycle ≤ 2% |
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