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FMMT591ATC Arkusz danych(PDF) 4 Page - Diodes Incorporated

Numer części FMMT591ATC
Szczegółowy opis  40V PNP MEDIUM POWER HIGH PERFORMANCE TRANSISTOR IN SOT23
PDF  7 Pages
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Producent  DIODES [Diodes Incorporated]
Strona internetowa  http://www.diodes.com
Logo DIODES - Diodes Incorporated

FMMT591ATC Arkusz danych(HTML) 4 Page - Diodes Incorporated

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FMMT591A
Document number: DS33105 Rev. 5 - 2
4 of 7
www.diodes.com
December 2013
© Diodes Incorporated
FMMT591A
A Product Line of
Diodes Incorporated
Electrical Characteristics (@TA = +25°C, unless otherwise specified.)
Characteristic
Symbol
Min
Typ
Max
Unit
Test Condition
Collector-Base Breakdown Voltage
BVCBO
-40
V
IC = -100μA
Collector-Emitter Breakdown Voltage (Note 9)
BVCEO
-40
V
IC = -10mA
Emitter-Base Breakdown Voltage
BVEBO
-7
V
IE = -100μA
Collector Cutoff Current
ICBO
-100
nA
VCB = -30V
Collector-Emitter Cutoff Current
ICES
-100
nA
VCES = -30V
Emitter Cutoff Current
IEBO
-100
nA
VEB = -5.6V
Collector-Emitter Saturation Voltage (Note 9)
VCE(sat)
-200
-350
-500
mV
IC = -100mA, IB = -1mA
IC = -500mA, IB = -20mA
IC = -1A, IB = -100mA
Base-Emitter Saturation Voltage (Note 9)
VBE(sat)
-1.1
V
IC = -1A, IB = -100mA
Base-Emitter Turn-On Voltage (Note 9)
VBE(on)
-1.0
V
IC = -1A, VCE = -5V
Static Forward Current Transfer Ratio (Note 9)
hFE
300
300
250
160
30
800
IC = -1mA, VCE = -5V
IC = -100mA, VCE = -5V
IC = -500mA, VCE = -5V
IC = -1A, VCE = -5V
IC = -2A, VCE = -5V
Transition Frequency
fT
150
00
MHz
VCE = -10V, IC = -50mA,
f = 100MHz
Output Capacitance
Cobo
10
pF
VCB = -10V, f = 1MHz
Switching Time
Delay Time
t(d)
34.9
ns
VCC = -10V, IC = -500mA,
IB1 = -IB2 =-25mA
Rise Time
t(r)
19.2
Storage Time
t(s)
249
Fall Time
t(f)
62
Note:
9. Measured under pulsed conditions. Pulse width
≤ 300µs. Duty cycle ≤ 2%



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