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ZXMC3AM832TC Arkusz danych(PDF) 4 Page - Diodes Incorporated

Numer części ZXMC3AM832TC
Szczegółowy opis  COMPLEMENTARY 30V ENHANCEMENT MODE MOSFET
PDF  10 Pages
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Producent  DIODES [Diodes Incorporated]
Strona internetowa  http://www.diodes.com
Logo DIODES - Diodes Incorporated

ZXMC3AM832TC Arkusz danych(HTML) 4 Page - Diodes Incorporated

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ZXMC3AM832
PROVISIONAL ISSUE E - JULY 2004
4
PARAMETER
SYMBOL
MIN.
TYP.
MAX.
UNIT
CONDITIONS
STATIC
Drain-Source Breakdown Voltage
V(BR)DSS
30
V
ID=250µA, VGS=0V
Zero Gate Voltage Drain Current
IDSS
0.5
µA
VDS=30V, VGS=0V
Gate-Body Leakage
IGSS
100
nA
VGS=±20V, VDS=0V
Gate-Source Threshold Voltage
VGS(th)
1V
I
D
=250
µA, VDS=VGS
Static Drain-Source On-State Resistance
(1)
RDS(on)
0.106
0.12
0.18
Ω
Ω
VGS=10V, ID=2.5A
VGS=4.5V, ID=2.0A
Forward Transconductance
(1)(3)
gfs
3.5
S
VDS=4.5V,ID=2.5A
DYNAMIC
(3)
Input Capacitance
Ciss
190
pF
VDS=25V,VGS=0V,
f=1MHz
Output Capacitance
Coss
38
pF
Reverse Transfer Capacitance
Crss
20
pF
SWITCHING
(2) (3)
Turn-On Delay Time
td(on)
1.7
ns
VDD =15V, ID=2.5A
RG=6.0Ω,VGS=10V
Rise Time
tr
2.3
ns
Turn-Off Delay Time
td(off)
6.6
ns
Fall Time
tf
2.9
ns
Gate Charge
Qg
2.3
nC
VDS=15V,VGS=5V,
ID=2.5A
Total Gate Charge
Qg
3.9
nC
VDS=15V,VGS=10V,
ID=2.5A
Gate-Source Charge
Qgs
0.6
nC
Gate-Drain Charge
Qgd
0.9
nC
SOURCE-DRAIN DIODE
Diode Forward Voltage
(1)
VSD
0.85
0.95
V
TJ=25°C, IS=1.7A,
VGS=0V
Reverse Recovery Time
(3)
trr
17.7
ns
TJ=25°C, IF=2.5A,
di/dt= 100A/
µs
Reverse Recovery Charge
(3)
Qrr
13.0
nC
N-CHANNEL
ELECTRICAL CHARACTERISTICS (at Tamb = 25°C unless otherwise stated)
NOTES
(1) Measured under pulsed conditions. Width
≤300µs. Duty cycle ≤ 2% .
(2) Switching characteristics are independent of operating junction temperature.
(3) For design aid only, not subject to production testing.
Not Recommended for New Design
Please Use ZXMC3AMCTA



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