STB155N3H6 datasheet(1/18 Pages) STMICROELECTRONICS

Numer części	STB155N3H6

Szczegółowy opis	N-channel 30 V, 2.5 m , 80 A, D PAK, DPAK STripFET VI DeepGATE Power MOSFET

PDF	18 Pages

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Producent	STMICROELECTRONICS [STMicroelectronics]

Strona internetowa	http://www.st.com

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1 / 18 page

May 2011

Doc ID 018793 Rev 2

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18

STB155N3H6

STD155N3H6

N-channel 30 V, 2.5 m

Ω , 80 A, D²PAK, DPAK

STripFET™ VI DeepGATE™ Power MOSFET

Features

■ RDS(on) * Qg industry benchmark

■ Extremely low on-resistance RDS(on)

■ High avalanche ruggedness

Application

■ Switching applications

■ Automotive

Description

These devices are 30 V N-channel Power

MOSFETs realized using ST`s proprietary

STripFET™ VI technology. The resulting Power

MOSFET exhibits the lowest RDS(on) in all

packages.

Figure 1.

Internal schematic diagram

Order codes

VDSS

RDS(on) max

ID

STB155N3H6

30 V

< 3 m

Ω

80 A (1)

1.

Limited by wire bonding

STD155N3H6

30 V

< 3 m

Ω

80 A (1)

DPAK

1

3

1

3

D²PAK

AM01474v1

D (TAB or 2)

G(1)

S(3)

Table 1.

Device summary

Order codes

Marking

Package

Packaging

STB155N3H6

155N3H6

D²PAK

Tape and reel

STD155N3H6

DPAK

www.st.com

Podobny numer części - STB155N3H6

Producent	Numer części	Arkusz danych	Szczegółowy opis
STMicroelectronics	STB155N3LH6	1,013Kb / 18P	N-channel 30 V, 2.4 mΩ , 80 A, DPAK, DPAK STripFETVI DeepGATE Power MOSFET 27-Sep-2011

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	STD80N6F6	676Kb / 15P	Automotive-grade N-channel 60 V, 4.4 m??typ., 80 A STripFET™VI DeepGATE™Power MOSFET in a DPAK package 17-Jan-2014
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