2N4403 datasheet(2/3 Pages) GE

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ELECTRICAL CHARACTERISTICS

Ratings at 25¡C ambient temperature unless otherwise specified

SYMBOL

MIN.

.MAX.

UNIT

Collector-Base Breakdown Voltage

at ÐIC = 0.1 mA, IE = 0

ÐV(BR)CBO

Volts

Collector-Emitter Breakdown Voltage(1)

at ÐIC = 1 mA, IB = 0

ÐV(BR)CEO

Volts

Emitter-Base Breakdown Voltage

at ÐIE = 0.1 mA, IC = 0

ÐV(BR)EBO

5.0

Volts

Collector-Emitter Saturation Voltage(1)

at ÐIC = 150 mA, ÐIB = 15 mA

ÐVCEsat

0.40

Volts

at ÐIC = 500 mA, ÐIB = 50 mA

ÐVCEsat

0.75

Volts

Base-Emitter Saturation Voltage(1)

at ÐIC = 150 mA, ÐIB = 15 mA

ÐVBEsat

0.75

0.95

Volts

at ÐIC = 500 mA, ÐIB = 50 mA

ÐVBEsat

1.30

Volts

Collector Cutoff Current

at ÐVEB = 0.4 V, ÐVCE = 35 V

ÐICEX

100

Base Cutoff Current

at ÐVEB = 0.4 V, ÐVCE = 35 V

ÐIBEV

100

DC Current Gain

at ÐVCE = 1 V, ÐIC = 0.1 mA

hFE

at ÐVCE = 1 V, ÐIC = 1 mA

hFE

at ÐVCE = 1 V, ÐIC = 10 mA

hFE

100

at ÐVCE = 2 V, ÐIC = 150 mA

(1)

hFE

100

300

at ÐVCE = 2 V, ÐIC = 500 mA

(1)

hFE

Input Impedance

at ÐVCE = 10 V, ÐIC = 1 mA, f = 1 kHZ

hie

1.5

Voltage Feedback Ratio

at ÐVCE = 10 V, ÐIC = 1 mA, f = 1 kHZ

hre

0.1 á 10

Ð4

8 á 10

Ð4

Current Gain-Bandwidth Product

at ÐVCE = 10 V, ÐIC = 20 mA, f = 100 MHZ

200

MHz

Collector-Base Capacitance

at ÐVCB = 10 V, IE=0, f = 1.0 MHZ

CCB

8.5

Emitter-Base Capacitance

at ÐVEB = 0.5 V, IC=0, f = 1.0 MHZ

CEB

Ð30

NOTES

(1) Pulse test: Pulse width ² 300

ms - Duty cycle ² 2%

2N4403

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