IXTP18N60PM

IXYS Reserves the Right to Change Limits,Test Conditions, and Dimensions.

IXYS MOSFETs and IGBTs are covered

4,835,592

4,931,844

5,049,961

5,237,481

6,162,665

6,404,065 B1

6,683,344

6,727,585

7,005,734 B2

7,157,338B2

by one or moreof the following U.S. patents: 4,850,072

5,017,508

5,063,307

5,381,025

6,259,123 B1

6,534,343

6,710,405 B2 6,759,692

7,063,975 B2

4,881,106

5,034,796

5,187,117

5,486,715

6,306,728 B1

6,583,505

6,710,463

6,771,478 B2 7,071,537

Terminals: 1 - Gate

2 - Drain (Collector)

3 - Source (Emitter)

12

3

OVERMOLDED TO-220

Symbol

Test Conditions

Characteristic Values

(T

Min.

Typ.

Max.

g

fs

V

9

16

S

C

iss

2500

pF

C

oss

V

280

pF

C

rss

23

pF

t

d(on)

21

ns

t

r

22

ns

t

d(off)

62

ns

t

f

22

ns

Q

g(on)

50

nC

Q

gs

V

15

nC

Q

gd

18

nC

R

thJC

1.39

°C/W

Source-Drain Diode

Symbol

Test Conditions

Characteristic Values

(T

Min.

Typ.

Max.

I

S

V

18

A

I

SM

Repetitive, Pulse Width Limited by T

JM

54

A

V

SD

I

1.5

V

t

rr

500

ns

Resistive Switching Times

V

R

I

V

Note: