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STP4435 Arkusz danych(PDF) 3 Page - Stanson Technology

Numer części STP4435
Szczegółowy opis  P Channel Enhancement Mode MOSFET
PDF  6 Pages
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Producent  STANSON [Stanson Technology]
Strona internetowa  http://www.stansontech.com
Logo STANSON - Stanson Technology

STP4435 Arkusz danych(HTML) 3 Page - Stanson Technology

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STP4435
P Channel Enhancement Mode MOSFET
-
10A
STANSON TECHNOLOGY
120 Bentley Square, Mountain View, Ca 94040 USA
www.stansontech.com
Copyright © 2007, Stanson Corp.
STP4435 2007. V1
ELECTRICAL CHARACTERISTICS ( Ta = 25℃ Unless otherwise noted )
Parameter
Symbol
Condition
Min Typ Max Unit
Static
Drain-Source Breakdown
Voltage
V(BR)DSS
VGS=0V,ID=-250uA
-30
V
Gate Threshold Voltage
VGS(th)
VDS=VGS,ID=-250 uA
-1.0
-3.0
V
Gate Leakage Current
IGSS
VDS=0V,VGS=±20V
±
100 nA
Zero Gate Voltage Drain
Current
IDSS
TJ=55℃
VDS=-30V,VGS=0V
-1
uA
VDS=-30V,VGS=0V
-5
Drain-source On-Resistance
RDS(on)
VGS=-10V, ID=-9.2A
VGS=-4.5V, ID=-7.0
0.022
0.030
0.028
0.035
Ω
Forward Tran Conductance
gfs
VDS=-10V,ID=-9.0A
24
S
Diode Forward Voltage
VSD
IS=-2.0A,VGS=0V
-0.8 -1.0
V
Dynamic
Total Gate Charge
Qg
VDS=-15V,VGS=-10V
ID≡-9.A
16
24
nC
Gate-Source Charge
Qgs
2.3
Gate-Drain Charge
Qgd
4.5
Input Capacitance
Ciss
VDS =-15V,VGS=0V
f=1MHz
1650
pF
Output Capacitance
Coss
350
Reverse TransferCapacitance
Crss
235
Turn-On Time
td(on)
tr
VDD=15V,RL=15Ω
ID=-1.0A,VGEN=-10V
RG=6Ω
16
30
nS
17
30
Turn-Off Time
td(off)
tf
65
110
35
80



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