IXYS reserves the right to change limits, test conditions, and dimensions.

IXGP 30N60B2

IXYS MOSFETs and IGBTs are covered by one or more

4,850,072

4,931,844

5,034,796

5,063,307

5,237,481

5,381,025

6,404,065B1 6,162,665

6,534,343

6,583,505

of the following U.S. patents:

4,835,592

4,881,106

5,017,508

5,049,961

5,187,117

5,486,715

6,306,728B1

6,259,123B1 6,306,728B1 6,683,344

Symbol

Test Conditions

Characteristic Values

(T

min.

typ.

max.

g

fs

I

C

= 24 A; V

18

26

S

Pulse test, t

≤ 300 µs, duty cycle ≤ 2 %

C

ies

1500

pF

C

oes

V

115

pF

C

res

40

pF

Q

g

66

nC

Q

ge

I

9

nC

Q

gc

22

nC

t

d(on)

13

ns

t

ri

15

ns

t

d(off)

110

200

ns

t

fi

82

150

ns

E

off

0.32

0.6 mJ

t

d(on)

13

ns

t

ri

17

ns

E

on

0.22

mJ

t

d(off)

200

ns

t

fi

150

ns

E

off

0.9

mJ

R

thJC

0.65 K/W

R

thCH

0.25

K/W

Inductive load, T

°°°°C

I

V

Inductive load, T

°°°°C

I

V

Pins: 1 - Gate

2 - Drain

3 - Source

4 - Drain