HAT1024R datasheet(4/10 Pages) HITACHI

Numer części	HAT1024R

Szczegółowy opis	Silicon P Channel Power MOS FET High Speed Power Switching

PDF	10 Pages

Scroll/Zoom	100%

Producent	HITACHI [Hitachi Semiconductor]

Strona internetowa	http://www.renesas.com/eng

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4 / 10 page

HAT1024R

Main Characteristics

4.0

3.0

2.0

1.0

100

150

200

–0.1

–100

–10

–1

–0.1

–0.01

–0.3

–1

–3

–10

–30

–100

–30

–3

–0.3

–0.03

µs

100

µs

1 ms

–20

–16

–12

–8

–4

–2

–4

–6

–8

–10

= –2.5 V

–10 V

–5 V

–4 V

–3.5 V

–3 V

–20

–16

–12

–8

–4

–2

–4

–6

–8

–10

Tc = –25

°C

–8 V

–6 V

–4.5 V

Ambient Temperature

Ta (

°C)

Power vs. Temperature Derating

Drain to Source Voltage

(V)

Maximum Safe Operation Area

Drain to Source Voltage

(V)

Typical Output Characteristics

Gate to Source Voltage

(V)

Typical Transfer Characteristics

Note 5 :

When using the glass epoxy board

(FR4 40x40x1.6 mm)

1 Drive

Operation

Operation in

this area is

limited by R DS(on)

Pulse Test

Test Condition :

When using the glass epoxy board

(FR4 40x40x1.6 mm), PW < 10 s

Note

Operation

(PW

Ta = 25

°C

1 shot Pulse

1 Drive Operation

= –10 V

Pulse Test

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