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SSFD6046 Arkusz danych(PDF) 1 Page - Silikron Semiconductor Co.,LTD. |
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SSFD6046 Arkusz danych(HTML) 1 Page - Silikron Semiconductor Co.,LTD. |
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1 / 4 page  SSFD6046 Feathers: Advanced trench process technology avalanche energy, 100% test Fully characterized avalanche voltage and current Description: The SSFD6046 is a new generation of middle voltage N–Channel enhancement mode trench power MOSFET. This new technology increases the device reliability and electrical parameter repeatability. SSFD6046 is assembled in high reliability and qualified assembly house. TOP View (TO252) ID =12A BV=60V Rdson=50mΩ（max.） SSFD6046 Marking and pin Assignment Absolute Maximum Ratings Parameter Max. Units ID@T 25ْC Continuous VGS@10V c= drain current, 12 ID@Tc=100ْC Continuous drain current,VGS@10V 9 IDM Pulsed drain current ① 30 A Power dissipation 20 W PD@TC ْC L r 0.12 W =25 inear derating facto /ْC VGS Gate-to-Source voltage ±20 V EAS Single ② 8 mJ pulse avalanche energy EAR Repetitive avalanche energy TBD TJ T St e –55 to +1 75 ْC STG Operating Junction and orage Temperature Rang hermal Resistance Parameter Min. Typ. Max. Units T RθJC Ju e nction-to-cas — — 7.5 RθJA J t unction-to-ambien — — 60 ْC/W lectrical Characteristics @TJ=25 ْC (unless otherwise specified) its Test Conditions E Parameter Min. Typ. Max. Un BV SS Drain-to-Sou wn voltage V D rce breakdo 60 — — V GS=0V,ID=250μA RDS(on) Static Drain-to-Source on-resistance — 46 50 mΩ VGS=10V,ID=12A VGS(th) Gate threshold voltage 1.0 3.0 V VDS=VGS,ID=250μA gfs F 15 orward transconductance — — S VDS=5V,ID=12A — — 1 VDS=60V,VGS=0V IDSS Drain-to-Source leakage current 10 μA VGS ْC — — VDS=60V, =0V,TJ=55 Gate-to-Source forward leakage 100 — — VGS=20V IGSS Gate-to-Source reverse leakage — — -100 nA VGS=-20V ©Silikron Semiconductor Corporation 2010.09.01 Version: 1. 1 page 1of4 |
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