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NPTS40 Arkusz danych(PDF) 1 Page - Naina Semiconductor ltd. |
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NPTS40 Arkusz danych(HTML) 1 Page - Naina Semiconductor ltd. |
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1 / 2 page  Naina Semiconductor Ltd. NPTS40 1 D-95, Sector 63, Noida – 201301, India • Tel: 0120-4205450 • Fax: 0120-4273653 sales@nainasemi.com • www.nainasemi.com Press Fit Stud Mount Triac ½”, 40 Amps Features • Improved glass passivation for high reliability • Exceptional stability at high temperatures • Metric thread type available • Low thermal resistance Notes: (1) All values apply in either direction Electrical Characteristics (TA = 25 0C unless otherwise specified) Parameter Symbol Part Numbers Units Maximum repetitive peak reverse voltage (1), VRRM 200 NPTS402 V 400 NPTS404 600 NPTS406 RMS on-state current IT(RMS) 40 A Non-repetitive peak surge on-state current, one cycle ITSM 400 A Peak gate trigger current IGTM 12 A Peak gate power dissipation @ IGT ≤ IGTM PGM 40 W Average gate power dissipation PG(AV) 0.75 W Peak off-state current (1) IDRM & IRRM 1.0 mA Maximum instantaneous forward voltage drop (1) VTM 2.0 V DC holding current (1) IH 60 mA Critical rate-of-rise of off-state voltage (1) Critical dv/dt 200 V/µsec Critical rate-of-rise of commutation voltage (1) Commutating dv/dt 3 V/µsec DC gate trigger current (T2+ Gate +, T2 - Gate -) Quads I and III IGT 100 mA (T2+ Gate - , T2 - Gate +) Quads II and IV 150 DC gate trigger voltage VGT 2.5 V Gate controlled turn-on time Tgt 3 µsec Thermal and Mechanical Specifications (TA = 25 oC, unless otherwise noted) Parameters Symbol Values Units Maximum operating junction temperature range TJ - 40 to +110 oC Maximum storage temperature range Tstg - 40 to +150 oC Maximum thermal resistance, junction to case Rθ(J-C) 1.8 oC/W Approximate weight W 20 g TO-48/F |
Podobny numer części - NPTS40 |
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