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GL494 Arkusz danych(PDF) 3 Page - Hynix Semiconductor |
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GL494 Arkusz danych(HTML) 3 Page - Hynix Semiconductor |
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3 / 7 page ![]() GL494 3 Dead Time Control Section PARAMETER TEST CONDITIONS MIN TYP(1) MAX UNIT Input bias current (pin 4) VI=0 to 5.25V -2 -10 A µ Maximum duty cycle, Each output ) 4 pin ( I V =0V 45 % Zero duty cycle 3 3.3 V Input threshold voltage (pin 4) Maximum duty cycle 0 V Error Amp Sections PARAMETER TEST CONDITIONS MIN TYP(1) MAX UNIT Input offset voltage V 5 . 2 V ) 3 PIN ( O = 2 10 mV Input offset current V 5 . 2 V ) 3 PIN ( O = 25 250 nA Input bias current V 5 . 2 V ) 3 PIN ( O = 0.2 1 A µ LOW -0.3 Common-mode input voltage range V 7 VCC = to 40V HIGH 2 V CC − V Open-loop voltage Amplification 5 . 0 V , V 3 V O O = = ∆ to3. 5V 70 95 dB Unity-gain bandwidth 800 KHz Common-mode rejection ratio V 40 VCC = , C 25 TA ° = 65 80 dB Output sink current (pin 3) mV 15 VID − = to –5V, V 7 . 0 V ) 3 pin ( O = 0.3 0.7 mA Output source current (pin 3) mV 15 VID = to 5V, V 5 . 3 V ) 3 pin ( O = -2 mA PWM Comparaor Section PARAMETER TEST CONDITIONS MIN TYP(1) MAX UNIT Input threshold voltage (pin 3) Zero duty cycle 4 4.5 V Input sink current (pin 3) V 7 . 0 V ) 3 pin ( O = 0.3 0.7 mA Switching Characteristics PARAMETER TEST CONDITIONS MIN TYP(1) MAX UNIT Output Voltage rise time 100 200 ns Output Voltage fall time Common-emitter configuration, See Test Circuit 3 25 100 ns Output Voltage rise time 100 200 ns Output Voltage fall time Emitter-follower configuration, See Test Circuit 4 40 100 ns |
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