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ICS8701CY Arkusz danych(PDF) 4 Page - Integrated Circuit Systems |
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ICS8701CY Arkusz danych(HTML) 4 Page - Integrated Circuit Systems |
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4 / 15 page ![]() 8701CY www.icst.com/products/hiperclocks.html REV. B AUGUST 2, 2001 4 Integrated Circuit Systems, Inc. ICS8701 LOW SKEW ÷1, ÷2 CLOCK GENERATOR ABSOLUTE MAXIMUM RATINGS Supply Voltage, V DDx 4.6V Inputs, V I -0.5V to V DD + 0.5V Outputs, V O -0.5V to V DDO + 0.5V Package Thermal Impedance, θ JA 47.9°C/W (0lfpm) Storage Temperature, T STG -65°C to 150°C Stresses beyond those listed under Absolute Maximum Ratings may cause permanent damage to the device. These ratings are stress specifications only. Functional operation of product at these conditions or any conditions beyond those listed in the DC Characteristics or AC Characteristics is not implied. Exposure to absolute maximum rating conditions for extended periods may affect product reliability. TABLE 4A. POWER SUPPLY DC CHARACTERISTICS, V DD = VDDO = 3.3V±5%, T A =0°C TO 70°C l o b m y Sr e t e m a r a Ps n o i t i d n o C t s e Tm u m i n i Ml a c i p y Tm u m i x a Ms t i n U V H I t u p n I e g a t l o V h g i H , B L E S _ V I D , A L E S _ V I D , D L E S _ V I D , C L E S _ V I D , 1 N E _ K N A B , 0 N E _ K N A B E O / R M n 28 . 3V K L C2 8 . 3V V L I t u p n I e g a t l o V w o L , B L E S _ V I D , A L E S _ V I D , D L E S _ V I D , C L E S _ V I D , 1 N E _ K N A B , 0 N E _ K N A B E O / R M n V D D V 5 6 4 . 3 =3 . 0 -8 . 0V K L CV D D V 5 6 4 . 3 =3 . 0 -3 . 1V I H I t u p n I t n e r r u C h g i H , B L E S _ V I D , A L E S _ V I D , D L E S _ V I D , C L E S _ V I D , 1 N E _ K N A B , 0 N E _ K N A B E O / R M n V D D =V N I V 5 6 4 . 3 =5 A µ K L CV D D =V N I V 5 6 4 . 3 =0 5 1A µ I L I t u p n I t n e r r u C w o L , B L E S _ V I D , A L E S _ V I D , D L E S _ V I D , C L E S _ V I D , 1 N E _ K N A B , 0 N E _ K N A B E O / R M n V D D , V 5 6 4 . 3 =V N I V 0 =0 5 1 -A µ K L CV D D , V 5 6 4 . 3 =V N I V 0 =5 -A µ V H O e g a t l o V h g i H t u p t u O V D D V = O D D V 5 3 1 . 3 = I H O A m 6 3 - = 6 . 2V V L O e g a t l o V w o L t u p t u O V D D V = O D D V 5 3 1 . 3 = I L O A m 6 3 = 5 . 0V l o b m y Sr e t e m a r a Ps n o i t i d n o C t s e Tm u m i n i Ml a c i p y Tm u m i x a Ms t i n U V D D e g a t l o V y l p p u S e v i t i s o P 5 3 1 . 33 . 35 6 4 . 3V V O D D e g a t l o V y l p p u S t u p t u O 5 3 1 . 33 . 35 6 4 . 3V I D D t n e r r u C y l p p u S r e w o P t n e c s e i u Q V D D V = H I V 5 6 4 . 3 = V L I V 0 = 5 9A m TABLE 4B. LVCMOS DC CHARACTERISTICS, V DD = VDDO = 3.3V±5%, T A =0°C TO 70°C |
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