FMMT591TA datasheet(4/7 Pages) DIODES

4 / 7 page

FMMT591

Document number: DS33104 Rev. 6 - 2

4 of 7

www.diodes.com

March 2014

FMMT591

A Product Line of

Diodes Incorporated

Electrical Characteristics (@TA = +25°C, unless otherwise specified.)

Characteristic

Symbol

Min

Typ

Max

Unit

Test Condition

Collector-Base Breakdown Voltage

BVCBO

-80

—

IC = -100µA

Collector-Emitter Breakdown Voltage (Note 9)

BVCEO

-60

—

IC = -10mA

Emitter-Base Breakdown Voltage

BVEBO

-7

-8.1

—

IE = -100µA

Collector-Base Cutoff Current

ICBO

—

-100

VCB = -60V

Emitter-Base Cutoff Current

IEBO

—

-100

VEB = -5.6V

Collector-Emitter Cut-Off Current

ICES

—

-100

VCE = -50V

Static Forward Current Transfer Ratio (Note 8)

hFE

100

220

175

155

—

300

—

IC = -1mA, VCE = -5V

IC = -500mA, VCE = -5V

IC = -1A, VCE = -5V

IC = -2A, VCE = -5V

Collector-Emitter Saturation Voltage (Note 8)

VCE(SAT)

—

-155

-295

-180

-350

IC = - 500mA, IB = -50mA

IC = - 1A, IB = -100mA

Base-Emitter Saturation Voltage (Note 8)

VBE(SAT)

—

965

-1200

IC = -1A, IB = -100mA

Base-Emitter Turn-On Voltage (Note 8)

VBE(ON)

—

830

-1000

IC = -1A, VCE = -5V

Transition Frequency

150

—

MHz

VCE = -10V, IC = -50mA,

f = 100MHz

Output Capacitance

Cobo

—

VCB = -10V, f = 1MHz

Note:

8. Measured under pulsed conditions. Pulse width ≤ 300µs. Duty cycle ≤ 2%.

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