BWS2301 datasheet(2/3 Pages) BWTECH

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Preliminary_BWS2301

P-Channel Enhancement-Mode

Publication Order Number: [BWS2301]

MAXIMUM RATINGS AND ELECTRICAL CHARACTERISTICS

Maximum Ratings (Tc=25°C unless otherwise noted)

Symbol

Parameter

BWS2301

Unit

BVDSS

Drain-Source Voltage

-20

VGS

Gate- Source Voltage

+/-8

Drain Current (continuous)

-2.3

IDM

Drain Current (pulsed)

-10

Total Device Dissipation

450

Junction

150

°C

TSTG

Storage Temperature

-55 to +150

°C

Maximum Ratings (Tc=25°C unless otherwise noted)

Symbol

Parameter

MIN

TYP

MAX

UNIT

BVDSS

Drain-Source Breakdown Voltage

(ID =250uA,VGS=0V)

-20

VGS(th)

Gate Threshold Voltage

(ID = 250uA,VGS= VDS)

-0.5

-1.5

VDS(ON)

Drain-Source On Voltage

(ID= -50mA,VGS= -5V)

(ID = -500mA,VGS= -10V)

-0.375

-3.75

VSD

Diode Forward Voltage Drop

(IS= -0.75A,VGS=0V)

-1.2

IDSS

Zero Gate Voltage Drain Current

(VGS=0V, VDS= -16V)

(VGS=0V, VDS= -16V, TA=55℃)

-1

-10

IGSS

Gate Body Leakage

(VGS=+8V, VDS=0V)

+/-100

RDS(ON)

Static Drain-Source On-State Resistance

(ID= 2.6A,VGS=4.5V)

(ID=1A,VGS=2.5V)

0.15

0.22

CISS

Input Capacitance

(VGS=0V, VDS= -6V,f=1MHz)

880

COSS

Output Capacitance

(VGS=0V, VDS= -6V,f=1MHz)

270

t(on)

Turn-ON Time

(VDS= -6V, ID= -

1A, RGEN=6Ω)

t(off)

Turn-OFF Time

(VDS= -6V, ID= -

1A, RGEN=6Ω)

Pulse Width<300μs; Duty Cycle<2.0%

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