BAT54WS datasheet(1/2 Pages) MAKOSEMI

Numer części	BAT54WS

Szczegółowy opis	SCHOTTKY BARRIER DIODE

PDF	2 Pages

Scroll/Zoom	100%

Producent	MAKOSEMI [MAKO SEMICONDUCTOR CO.,LIMITED]

Strona internetowa	http://www.makosemi.hk/

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1 / 2 page

Page:P2-P1

Plastic-Encapsulate Diodes

SCHOTTKY BARRIER DIODE

FEATURES

Low turn-on voltage.

Fast switching.

Ultra-small surface mount package.

PN junction guard ring for transient and ESD protection.

MARKING

L9

MAXIMUM RATING @ Ta=25

unless otherwise specified

Parameter

Symbol

Limits

Unit

Peak Repetitive reverse voltage

Working peak reverse voltage

DC reverse voltage

VRRM

VRWM

VR

30

V

RMS Reverse Voltage

VR(RMS)

21

V

Average Rectified Output Current

IO

100

mA

Forward continuous Current

IF

200

mA

Repetitive peak Forward Current

IFRM

300

mA

Forward Surge Current

@t<1.0s

IFSM

600

mA

Power Dissipation

Pd

200

mW

Thermal resistance,junction to ambient air

RθjA

625

/W

Junction temperature

Tj

125

Storage temperature range

Tstg

-65-150

ELECTRICAL CHARACTERISTICS (Tamb=25

unless otherwise specified)

Parameter

Symbol

Conditions

Min.

Typ.

Max.

Unit

Reverse Breakdown Voltage

V(BR)R

IR=100μA

30

V

Forward voltage

VF1

IF=0.1mA

240

mV

VF2

IF=1.0mA

320

mV

VF3

IF=10mA

400

mV

VF4

IF=30mA

500

mV

VF5

IF=100mA

1000

mV

Reverse leakage current

IR

VR=25V

2.0

μA

Reverse recovery time

trr

IF=10mA,IR=10mA

to 1mA RL=100Ω

5.0

ns

Junction capacitance

CJ

VR=1.0V,f=1.0MHz

10

pF

SOD-323

-

+

BAT54WS

MAKO Semiconductor Co., Limited 4008-378-873 http://www.makosemi.hk/

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