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IDT71342LA55J Arkusz danych(PDF) 5 Page - Integrated Device Technology

Numer części IDT71342LA55J
Szczegółowy opis  HIGH-SPEED 4K x 8 DUAL-PORT STATIC RAM WITH SEMAPHORE
PDF  13 Pages
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Producent  IDT [Integrated Device Technology]
Strona internetowa  http://www.idt.com
Logo IDT - Integrated Device Technology

IDT71342LA55J Arkusz danych(HTML) 5 Page - Integrated Device Technology

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6.05
5
IDT71342SA/LA
HIGH-SPEED 4K x 8 DUAL-PORT STATIC RAM WITH SEMAPHORE
COMMERCIAL TEMPERATURE RANGE
AC ELECTRICAL CHARACTERISTICS OVER THE
OPERATING TEMPERATURE AND SUPPLY VOLTAGE(4) (CONT'D)
71342X45
71342X55
71342X70
Symbol
Parameter
Min.
Max.
Min.
Max.
Min.
Max.
Unit
READ CYCLE
tRC
Read Cycle Time
45
55
70
ns
tAA
Address Access Time
45
55
70
ns
tACE
Chip Enable Access Time
(3)
—45
55
70
ns
tAOE
Output Enable Access Time
25
30
40
ns
tOH
Output Hold from Address Change
0
0
0
ns
tLZ
Output Low-Z Time
(1, 2)
5—
5
5
ns
tHZ
Output High-Z Time
(1, 2)
—20
25
30
ns
tPU
Chip Enable to Power Up Time
(2)
0—
0
0
ns
tPD
Chip Disable to Power Down Time
(2)
—50
50
50
ns
tSOP
SEM Flag Update Pulse (
OE or SEM)15
20
20
ns
tWDD
Write Pulse to Data Delay
(4)
—70
80
90
ns
tDDD
Write Data Valid to Read Data Delay
(4)
—45
55
70
ns
tSAA
Semaphore Address Access Time
45
55
70
ns
NOTES:
1. Transition is measured
±500mV from Low or High-impedance voltage with the Ouput Test Load (Figure 2).
2. This parameter is guaranteed by device characterization, but is not production tested.
3. To access RAM,
CE = VIL, SEM = VIH. To access semaphore, CE = VIH, and SEM = VIL.
4. “X” in part number indicates power rating (SA or LA).
AC ELECTRICAL CHARACTERISTICS OVER THE
OPERATING TEMPERATURE AND SUPPLY VOLTAGE(4)
71342X20
71342X25
71342X35
Symbol
Parameter
Min.
Max.
Min.
Max.
Min.
Max.
Unit
READ CYCLE
tRC
Read Cycle Time
20
25
35
ns
tAA
Address Access Time
20
25
35
ns
tACE
Chip Enable Access Time
(3)
—20
25
35
ns
tAOE
Output Enable Access Time
15
15
20
ns
tOH
Output Hold from Address Change
0
0
0
ns
tLZ
Output Low-Z Time
(1, 2)
0—
0
0
ns
tHZ
Output High-Z Time
(1, 2)
—15
15
20
ns
tPU
Chip Enable to Power Up Time
(2)
0—
0
0
ns
tPD
Chip Disable to Power Down Time
(2)
—50
50
50
ns
tSOP
SEM Flag Update Pulse (
OE or SEM)—
10
15
ns
tWDD
Write Pulse to Data Delay
(4)
—40
50
60
ns
tDDD
Write Data Valid to Read Data Delay
(4)
—30
30
35
ns
tSAA
Semaphore Address Access Time
25
35
ns
2721 tbl 09
2721 tbl 10



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