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FT231XQ-R Arkusz danych(PDF) 16 Page - Future Technology Devices International Ltd. |
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FT231XQ-R Arkusz danych(HTML) 16 Page - Future Technology Devices International Ltd. |
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16 / 45 page ![]() Copyright © 2013 Future Technology Devices International Limited 16 FT231X USB TO FULL HANDSHAKE UART IC Datasheet Version 1.2 Document No.: FT_000565 Clearance No.: FTDI# 261 5 Devices Characteristics and Ratings 5.1 Absolute Maximum Ratings The absolute maximum ratings for the FT231X devices are as follows. These are in accordance with the Absolute Maximum Rating System (IEC 60134). Exceeding these may cause permanent damage to the device. Parameter Value Unit Conditions Storage Temperature -65°C to 150°C Degrees C Floor Life (Out of Bag) At Factory Ambient (30°C / 60% Relative Humidity) 168 Hours (IPC/JEDEC J- STD-033A MSL Level 3 Compliant)* Hours Ambient Operating Temperature (Power Applied) -40°C to 85°C Degrees C MTTF FT231XS TBD Hours MTTF FT231XQ TBD Hours VCC Supply Voltage -0.3 to +5.5 V VCCIO IO Voltage -0.3 to +4.0 V DC Input Voltage – USBDP and USBDM -0.5 to +3.63 V DC Input Voltage – High Impedance Bi-directionals (powered from VCCIO) -0.3 to +5.8 V DC Output Current – Outputs 22 mA ESD Charge Device Mode(CDM) 500 V Class III ESD Human Body Mode (HDM) 2000 V Class 2 Table 5.1 Absolute Maximum Ratings * If devices are stored out of the packaging beyond this time limit the devices should be baked before use. The devices should be ramped up to a temperature of +125°C and baked for up to 17 hours. 5.2 ESD and Latch-up Specifications Description Specification Human Body Mode (HBM) > ± 2kV Machine mode (MM) > ± 200V Charged Device Mode (CDM) > ± 500V Latch-up > ± 200mA Table 5.2 ESD and Latch-Up Specifications |
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