KTC3876 datasheet(1/2 Pages) MAKOSEMI

Numer części	KTC3876

Szczegółowy opis	Plastic-Encapsulate Transistors

PDF	2 Pages

Scroll/Zoom	100%

Producent	MAKOSEMI [MAKO SEMICONDUCTOR CO.,LIMITED]

Strona internetowa	http://www.makosemi.hk/

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1 / 2 page

Page:P2-P1

Plastic-Encapsulate Transistors

FEATURES

• High hFE

• Complementary to KTA1505

Maximum Ratings (TA=25

unless otherwise noted)

Parameter

Symbol

Value

Unit

Collector-Base Voltage

VCBO

35

V

Collector-Emitter Voltage

VCEO

30

V

Emitter-Base Voltage

VEBO

5

V

Collector Current -Continuous

IC

0.5

A

Collector Power dissipation

PC

0.2

W

Junction Temperature

TJ

150

Storage Temperature

Tstg

-55to +150

ELECTRICAL CHARACTERISTICS ( @ Ta=25

unless otherwise specified)

Parameter

Symbol

Test

conditions

Min

Typ

Max

Unit

Collector-base breakdown voltage

VCBO

IC=100

μA, IE=0

35

V

Collector-emitter breakdown voltage

VCEO

IC= 1mA, IB=0

30

V

Emitter-base breakdown voltage

VEBO

IE= 100

μA, IC=0

5

V

Collector cut-off current

ICBO

VCB= 35V, IE=0

0.1

uA

Emitter cut-off current

IEBO

VEB= 5V, IC=0

0.1

uA

DC current gain

hFE1

VCE=1V, IC= 100mA

70

400

hFE2

VCE=6V, IC= 400mA

O

Y

25

40

Collector-emitter saturation voltage

VCE(sat)

IC=100mA, IB= 10mA

0.25

V

base-emitter voltage

VBE

VCE=1V, IB= 100mA

1

V

Transition frequency

fT

VCE=6V,

IC=20mA

300

MHz

Collector output capacitance

Cob

VCB=6V,IE=0,f=1MHZ

7

pF

CLASSIFICATION OF hFE

Rank

O

Y

G

Range

70-140

120-240

200-400

Marking

WO

WY

WG

KTC3876(NPN)

1. BASE

2. EMITTER

SOT-23

3. COLLECTO

MAKO Semiconductor Co., Limited

4008-378-873

http://www.makosemi.hk/

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