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CDP1821CD3 Arkusz danych(PDF) 4 Page - Intersil Corporation

Numer części CDP1821CD3
Szczegółowy opis  High-Reliability CMOS 1024-Word x 1-Bit Static RAM
PDF  7 Pages
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Producent  INTERSIL [Intersil Corporation]
Strona internetowa  http://www.intersil.com/cda/home
Logo INTERSIL - Intersil Corporation

CDP1821CD3 Arkusz danych(HTML) 4 Page - Intersil Corporation

  CDP1821CD3 Datasheet HTML 1Page - Intersil Corporation CDP1821CD3 Datasheet HTML 2Page - Intersil Corporation CDP1821CD3 Datasheet HTML 3Page - Intersil Corporation CDP1821CD3 Datasheet HTML 4Page - Intersil Corporation CDP1821CD3 Datasheet HTML 5Page - Intersil Corporation CDP1821CD3 Datasheet HTML 6Page - Intersil Corporation CDP1821CD3 Datasheet HTML 7Page - Intersil Corporation  
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Read Cycle Dynamic Electrical Specifications
tR, tF = 10ns, CL = 50pF
PARAMETER
SYMBOL
VDD
(V)
-55oC, +25oC
+125oC
UNITS
MIN
MAX
MIN
MAX
Data Access Time (Note 1)
tDA
5
-
190
-
255
ns
Read Cycle Time
tRC
5
190
-
255
-
ns
Output Enable Time
tEN
5
65
-
90
-
ns
Output Disable Time
tDIS
5
-
65
-
90
ns
NOTE:
1. 100% testing. All other limits are designer’s parameters under given test conditions and do not represent 100% testing.
NOTES:
1. Chip-Select (CS) permitted to change from high to low level or remain low on a selected device.
2. Chip-Select (CS) permitted to change from low to high level or remain low.
3. Read/Write (R/W) must be at a high level during all address transitions.
4. Don’t care.
5. Data-Out (DO) is a high impedance within tDIS ns after the falling edge of R/W or the rising edge of CS.
FIGURE 1. READ CYCLE TIMING DIAGRAM
CS
A0 - A9
R/W
DATA OUT
(NOTE 3)
(NOTE 5)
(NOTE 1)
(NOTE 2)
(NOTE 4)
(NOTE 5)
HIGH
IMPEDANCE
DATA OUT
VALID
tDOH
tDOA
tRC
tAA
CDP1821C/3



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