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CDP1821CD3 Arkusz danych(PDF) 4 Page - Intersil Corporation |
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CDP1821CD3 Arkusz danych(HTML) 4 Page - Intersil Corporation |
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4 / 7 page ![]() 6-8 Read Cycle Dynamic Electrical Specifications tR, tF = 10ns, CL = 50pF PARAMETER SYMBOL VDD (V) -55oC, +25oC +125oC UNITS MIN MAX MIN MAX Data Access Time (Note 1) tDA 5 - 190 - 255 ns Read Cycle Time tRC 5 190 - 255 - ns Output Enable Time tEN 5 65 - 90 - ns Output Disable Time tDIS 5 - 65 - 90 ns NOTE: 1. 100% testing. All other limits are designer’s parameters under given test conditions and do not represent 100% testing. NOTES: 1. Chip-Select (CS) permitted to change from high to low level or remain low on a selected device. 2. Chip-Select (CS) permitted to change from low to high level or remain low. 3. Read/Write (R/W) must be at a high level during all address transitions. 4. Don’t care. 5. Data-Out (DO) is a high impedance within tDIS ns after the falling edge of R/W or the rising edge of CS. FIGURE 1. READ CYCLE TIMING DIAGRAM CS A0 - A9 R/W DATA OUT (NOTE 3) (NOTE 5) (NOTE 1) (NOTE 2) (NOTE 4) (NOTE 5) HIGH IMPEDANCE DATA OUT VALID tDOH tDOA tRC tAA CDP1821C/3 |
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