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FSJ055R3 Arkusz danych(PDF) 2 Page - Intersil Corporation

Numer części FSJ055R3
Szczegółowy opis  70A, 60V, 0.012 Ohm, Radiation Hardened, SEGR Resistant, N-Channel Power MOSFETs
PDF  9 Pages
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Producent  INTERSIL [Intersil Corporation]
Strona internetowa  http://www.intersil.com/cda/home
Logo INTERSIL - Intersil Corporation

FSJ055R3 Arkusz danych(HTML) 2 Page - Intersil Corporation

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2
Absolute Maximum Ratings TC = 25oC, Unless Otherwise Specified
FSJ055D, FSJ055R
UNITS
Drain to Source Voltage . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .VDS
60
V
Drain to Gate Voltage (RGS = 20kΩ) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . VDGR
60
V
Continuous Drain Current
TC = 25
oC . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . I
D
70
A
TC = 100
oC . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .I
D
54
A
Pulsed Drain Current . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . IDM
200
A
Gate to Source Voltage . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .VGS
±20
V
Maximum Power Dissipation
TC = 25
oC . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . P
T
125
W
TC = 100
oC . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .P
T
50
W
Linear Derating Factor . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
1.20
W/oC
Single Pulsed Avalanche Current, L = 100
µH, (See Test Figure) . . . . . . . . . . . . . . . . . . . . . . . . IAS
200
A
Continuous Source Current (Body Diode) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . IS
70
A
Pulsed Source Current (Body Diode). . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . ISM
200
A
Operating and Storage Temperature . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .TJ,TSTG
-55 to 150
oC
Lead Temperature (During Soldering) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . TL
(Distance >0.063 in. (1.6mm) from Case, 10s Max)
300
oC
CAUTION: Stresses above those listed in “Absolute Maximum Ratings” may cause permanent damage to the device. This is a stress only rating and operation of the
device at these or any other conditions above those indicated in the operational sections of this specification is not implied.
Electrical Specifications
TC = 25
oC, Unless Otherwise Specified
PARAMETER
SYMBOL
TEST CONDITIONS
MIN
TYP
MAX
UNITS
Drain to Source Breakdown Voltage
BVDSS
ID = 1mA, VGS = 0V
60
-
-
V
Gate Threshold Voltage
VGS(TH)
VGS = VDS,
ID = 1mA
TC = -55
oC
-
-
5.0
V
TC = 25
oC
1.5
-
4.0
V
TC = 125
oC
0.5
-
-
V
Zero Gate Voltage Drain Current
IDSS
VDS = 48V,
VGS = 0V
TC = 25
oC-
-
25
µA
TC = 125
oC
-
-
250
µA
Gate to Source Leakage Current
IGSS
VGS = ±20V
TC = 25
oC
-
-
100
nA
TC = 125
oC
-
-
200
nA
Drain to Source On-State Voltage
VDS(ON)
VGS = 12V, ID = 70A
-
-
0.88
V
Drain to Source On Resistance
rDS(ON)12
ID = 54A,
VGS = 12V
TC = 25
oC
-
0.008
0.012
Ω
TC = 125
oC
-
-
0.022
Ω
Turn-On Delay Time
tD(ON)
VDD = 30V, ID = 70A,
RL = 0.43Ω, VGS 12V,
RGS = 2.35Ω
-
-
40
ns
Rise Time
tr
-
-
200
ns
Turn-Off Delay Time
td(OFF)
-
-
70
ns
Fall Time
tf
-
-
40
ns
Total Gate Charge
Qg(TOT)
VGS = 0V to 20V
VDD = 30V,
ID = 70A
-
-
280
nC
Gate Charge at 12V
Qg(12)
VGS = 0V to 12V
-
150
170
nC
Threshold Gate Charge
Qg(TH)
VGS = 0V to 2V
-
-
12
nC
Gate Charge Source
Qgs
-35
43
nC
Gate Charge Drain
Qgd
-59
81
nC
Plateau Voltage
V(PLATEAU) ID = 70A, VDS = 15V
-
7
-
V
Input Capacitance
CISS
VDS = 25V, VGS = 0V,
f = 1MHz
-
4850
-
pF
Output Capacitance
COSS
-
2200
-
pF
Reverse Transfer Capacitance
CRSS
-
425
-
pF
Thermal Resistance Junction to Case
RθJC
-
-
0.83
oC/W
Thermal Resistance Junction to Ambient
RθJA
--
40
oC/W
FSJ055D, FSJ055R



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