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IRLML6401 Arkusz danych(PDF) 2 Page - Guangdong Kexin Industrial Co.,Ltd

Numer części IRLML6401
Szczegółowy opis  P-Channel Enhancement MOSFET
PDF  6 Pages
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Producent  KEXIN [Guangdong Kexin Industrial Co.,Ltd]
Strona internetowa  http://www.kexin.com.cn/index.asp
Logo KEXIN - Guangdong Kexin Industrial Co.,Ltd

IRLML6401 Arkusz danych(HTML) 2 Page - Guangdong Kexin Industrial Co.,Ltd

  IRLML6401 Datasheet HTML 1Page - Guangdong Kexin Industrial Co.,Ltd IRLML6401 Datasheet HTML 2Page - Guangdong Kexin Industrial Co.,Ltd IRLML6401 Datasheet HTML 3Page - Guangdong Kexin Industrial Co.,Ltd IRLML6401 Datasheet HTML 4Page - Guangdong Kexin Industrial Co.,Ltd IRLML6401 Datasheet HTML 5Page - Guangdong Kexin Industrial Co.,Ltd IRLML6401 Datasheet HTML 6Page - Guangdong Kexin Industrial Co.,Ltd  
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i
Electrical Characteristics Ta = 25℃
Parameter
Symbol
Test Conditions
Min
Typ
Max
Unit
Drain-Source Breakdown Voltage
VDSS
ID=-250μA, VGS=0V
-12
V
VDS=-12V, VGS=0V
-1
VDS=-9.6V, VGS=0V, TJ= 55℃
-25
Gate-Body leakage current
IGSS
VDS=0V, VGS=±8V
±
100 nA
Gate Threshold Voltage
VGS(th)
VDS=VGS ID=-250μA
-0.4 -0.55 -0.95
V
VGS=-4.5V, ID=-4.3A
50
VGS=-2.5V, ID=-2.5A
85
VGS=-1.8V, ID=-2A
125
Forward Transconductance
gFS
VDS=-10V, ID=-4.3A
8.6
S
Input Capacitance
Ciss
830
Output Capacitance
Coss
180
Reverse Transfer Capacitance
Crss
125
Total Gate Charge
Qg
10
15
Gate Source Charge
Qgs
1.4
2.1
Gate Drain Charge
Qgd
2.6
3.9
Turn-On DelayTime
td(on)
11
Turn-On Rise Time
tr
32
Turn-Off DelayTime
td(off)
250
Turn-Off Fall Time
tf
210
Body Diode Reverse Recovery Time
trr
IF=-1.3A, dI/dt=-100A/μs
22
33
Body Diode Reverse Recovery Charge
Qrr
IF=-1.3A, dI/dt=-100A/μs
8
12
Nc
Maximum Body-Diode Continuous Current
IS
1.3
A
Diode Forward Voltage
VSD
IS=-1.3A,VGS=0V
-1.2
V
VGS=0V, VDS=-10V, f=1MHz
VGS=-5.0V, VDS=-10V, ID=-4.3A
pF
nC
ns
Zero Gate Voltage Drain Current
IDSS
μ
A
ID=-1.0A, VDS=-6.0V, RL=6Ω,RGEN=89Ω
RDS(On)
Static Drain-Source On-Resistance
Marking
Marking
1F *
IRLML6401 (KRLML6401)



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