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US1AF Arkusz danych(PDF) 1 Page - Guangdong Kexin Industrial Co.,Ltd

Numer części US1AF
Szczegółowy opis  Ultra Fast Recovery Diodes
PDF  3 Pages
Scroll/Zoom Zoom In 100%  Zoom Out
Producent  KEXIN [Guangdong Kexin Industrial Co.,Ltd]
Strona internetowa  http://www.kexin.com.cn/index.asp
Logo KEXIN - Guangdong Kexin Industrial Co.,Ltd

US1AF Arkusz danych(HTML) 1 Page - Guangdong Kexin Industrial Co.,Ltd

  US1AF Datasheet HTML 1Page - Guangdong Kexin Industrial Co.,Ltd US1AF Datasheet HTML 2Page - Guangdong Kexin Industrial Co.,Ltd US1AF Datasheet HTML 3Page - Guangdong Kexin Industrial Co.,Ltd  
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background image
SMD Type
www.kexin.com.cn
1
Diodes
■
Features
●
Glass Passivated Chip
●
Low Forward Voltage Drop And High Current Capability
●
Low Reverse Leakage Current
●
Epoxy meets UL 94 V-0 flammability rating
●
Ultra Fast Switching For High Efficiency
SOD-123F
Unit:mm
2.8 ± 0.1
Cathode Band
Top View
3.7 ± 0.1
0.65 0.1
±
■
Absolute Maximum Ratings Ta = 25℃
Parameter
Symbol
US
1AF
US
1BF
US
1CF
US
1DF
US
1GF
US
1JF
US
1KF
US
1MF
Unit
Repetitive Peak Reverse Voltage
VRRM
50
100
150
200
400
600
800 1000
RMS Voltage
VRMS
35
70
105
140
280
420
560
700
Maximum DC Blocking Voltage
VDC
50
100
150
200
400
600
800 1000
Averaged Forward Current.TL=110℃
IFAV
Peak Forward Surge Current @ 8.3ms
IFSM
Thermal Resistance Junction to Ambient
RθJA
℃
/W
Junction Temperature
Tj
Operating Temperature
TOP
Storage Temperature
Tstg
A
30
V
1
30
-65 to 175
150
-65 to 175
℃
■
Electrical Characteristics Ta = 25℃
Symbol
Test Conditions
Min
Typ
Max
Unit
US1AF-1DF
1
US1GF
1.4
US1JF-1MF
1.7
Ta = 25℃
10
Ta = 100℃
100
US1AF-US1GF
50
US1JF~US1KF
75
US1MF
100
US1AF-1GF
20
US1JF-1MF
17
Parameter
Forward voltage
Reverse voltage leakage current
V
ns
VF
IR
IFM=1A, TJ = 25°C
Reverse Recovery Time
Trr
IF=0.5A, IR=1A, Irr=0.25A
uA
Typical Junction Capacitance
CJ
VR=4V, f=1MHz
pF
■
Marking
NO.
US1AF
US1BF
US1CF
US1DF
US1GF
US1JF
US1KF
US1MF
Marking
US1A
US1B
US1C
US1D
US1G
US1J
US1K
US1M
Ultra Fast Recovery Diodes
US1AF ~ US1MF


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