2SC5336 datasheet(2/7 Pages) CEL

Numer części	2SC5336

Szczegółowy opis	NPN SILICON RF TRANSISTOR FOR HIGH-FREQUENCY LOW DISTORTION AMPLIFIER

PDF	7 Pages

Scroll/Zoom	100%

Producent	CEL [California Eastern Labs]

Strona internetowa	http://www.cel.com

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2 / 7 page

Data Sheet P10938EJ2V0DS

NE856M02 / 2SC5336

ELECTRICAL CHARACTERISTICS (TA = +25°°°°C)

Parameter

Symbol

Test Conditions

MIN.

TYP.

MAX.

Unit

DC Characteristics

Collector Cut-off Current

ICBO

VCB = 10 V, IE = 0 mA

–

1.0

Emitter Cut-off Current

IEBO

VBE = 1 V, IC = 0 mA

–

1.0

DC Current Gain

hFE Note1 VCE = 10 V, IC = 20 mA

120

250

–

RF Characteristics

Gain Bandwidth Product

VCE = 10 V, IC = 20 mA

–

6.5

–

GHz

Insertion Power Gain

⏐

S21e⏐2 VCE = 10 V, IC = 20 mA, f = 1 GHz

–

Noise Figure (1)

VCE = 10 V, IC = 7 mA, f = 1 GHz

–

1.1

–

Noise Figure (2)

VCE = 10 V, IC = 40 mA, f = 1 GHz

–

1.8

3.0

Reverse Transfer Capacitance

CreNote2

VCB = 10 V, IE = 0 mA, f = 1 MHz

–

0.5

0.8

Notes 1. Pulse measurement: PW ≤ 350 μs, Duty Cycle ≤ 2%

2. Collector to base capacitance when the emitter grounded

hFE CLASSIFICATION

Rank

Marking

hFE Value

50 to 100

80 to 160

125 to 250

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