IRF520VL datasheet(1/10 Pages) IRF

Numer części	IRF520VL

Szczegółowy opis	Power MOSFET(Vdss=100V, Rds(on)=0.165ohm, Id=9.6A)

PDF	10 Pages

Scroll/Zoom	100%

Producent	IRF [International Rectifier]

Strona internetowa	http://www.irf.com

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IRF520VS

IRF520VL

HEXFET® Power MOSFET

01/18/02

Parameter

Typ.

Max.

Units

RθJC

Junction-to-Case

–––

3.4

RθJA

Junction-to-Ambient (PCB Mounted, steady state)**

–––

40

Thermal Resistance

www.irf.com

1

VDSS = 100V

RDS(on) = 0.165Ω

ID = 9.6A

S

D

G

Advanced HEXFET® Power MOSFETs from International Rectifier

utilize advanced processing techniques to achieve extremely low on-

resistance per silicon area.

This benefit, combined with the fast

switching speed and ruggedized device design that HEXFET power

MOSFETs are well known for, provides the designer with an extremely

efficient and reliable device for use in a wide variety of applications.

The D2Pak is a surface mount power package capable of accommodating

die sizes up to HEX-4. It provides the highest power capability and the

lowest possible on-resistance in any existing surface mount package. The

D2Pak is suitable for high current applications because of its low internal

connection resistance and can dissipate up to 2.0W in a typical surface

mount application.

The through-hole version (IRF520VL) is available for low-profile applications.

l Advanced Process Technology

l Ultra Low On-Resistance

l Dynamic dv/dt Rating

l 175°C Operating Temperature

l Fast Switching

l Fully Avalanche Rated

l Optimized for SMPS Applications

Description

PD - 94306

Absolute Maximum Ratings

Parameter

Max.

Units

ID @ TC = 25°C

Continuous Drain Current, VGS @ 10V

9.6

ID @ TC = 100°C

Continuous Drain Current, VGS @ 10V

6.8

A

IDM

Pulsed Drain Current

37

PD @TC = 25°C

Power Dissipation

44

W

Linear Derating Factor

0.29

W/°C

VGS

Gate-to-Source Voltage

± 20

V

IAR

Avalanche Current

9.2

A

EAR

Repetitive Avalanche Energy

4.4

mJ

dv/dt

Peak Diode Recovery dv/dt

7.0

V/ns

TJ

Operating Junction and

-55 to + 175

TSTG

Storage Temperature Range

Soldering Temperature, for 10 seconds

300 (1.6mm from case )

°C

D2Pak

IRF520VS

TO-262

IRF520VL

°C/W

Podobny numer części - IRF520VL

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International Rectifier	IRF520VLPBF	225Kb / 11P	HEXFET Power MOSFET

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Podobny opis - IRF520VL

Producent	Numer części	Arkusz danych	Szczegółowy opis
International Rectifier	IRC540	222Kb / 8P	Power MOSFET(Vdss=100V, Rds(on)=0.077ohm, Id=28A)
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	IRF3710S	184Kb / 10P	Power MOSFET(Vdss=100V, Rds(on)=0.025ohm, Id=57A)
	IRF520V	200Kb / 8P	Power MOSFET(Vdss=100V, Rds(on)=0.165ohm, Id=9.6A)
	IRF5210	125Kb / 8P	Power MOSFET(Vdss=-100V, Rds(on)=0.06ohm, Id=-40A)
	IRF540N	99Kb / 8P	Power MOSFET(Vdss=100V, Rds(on)=44mohm, Id=33A)
	IRF9510S	176Kb / 6P	Power MOSFET(Vdss=-100V, Rds(on)=1.2ohm, Id=-4.0A)
	IRF9520N	95Kb / 8P	Power MOSFET(Vdss=-100V, Rds(on)=0.48ohm, Id=-6.8A)
	IRF9530NS	173Kb / 10P	Power MOSFET(Vdss=-100V, Rds(on)=0.20ohm, Id=-14A)
	IRFRU5410	215Kb / 10P	Power MOSFET(Vdss=-100V, Rds(on)=0.205ohm, Id=-13A)

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IRF520VL Arkusz danych(PDF) 1 Page - International Rectifier

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