IRF5N3710 datasheet(1/7 Pages) IRF

Numer części	IRF5N3710

Szczegółowy opis	POWER MOSFET N-CHANNEL(Vdss=100V, Rds(on)=0.028ohm, Id=45A)

PDF	7 Pages

Scroll/Zoom	100%

Producent	IRF [International Rectifier]

Strona internetowa	http://www.irf.com

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1 / 7 page

Absolute Maximum Ratings

Parameter

Units

ID @ VGS = 10V, TC = 25°C

Continuous Drain Current

45

ID @ VGS = 10V, TC = 100°C Continuous Drain Current

30

IDM

Pulsed Drain Current ➀

180

PD @ TC = 25°C

Max. Power Dissipation

125

W

Linear Derating Factor

1.0

W/°C

VGS

Gate-to-Source Voltage

±20

V

EAS

Single Pulse Avalanche Energy ➁

250

mJ

IAR

Avalanche Current ➀

28

A

EAR

Repetitive Avalanche Energy ➀

12.5

mJ

dv/dt

Peak Diode Recovery dv/dt ➂

3.7

V/ns

T J

Operating Junction

-55 to 150

TSTG

Storage Temperature Range

Package Mounting Surface Temperature

300 (for 5 s)

Weight

2.6 (Typical)

g

oC

A

7/9//01

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1

Product Summary

Part Number

BVDSS

RDS(on)

ID

IRF5N3710

100V

0.028

Ω

45A

For footnotes refer to the last page

HEXFET® POWER MOSFET

IRF5N3710

SURFACE MOUNT (SMD-1)

100V, N-CHANNEL

Fifth Generation HEXFET®

power MOSFETs from

International Rectifier utilize advanced processing

techniques to achieve the lowest possible on-resistance

per silicon unit area. This benefit, combined with the

fast switching speed and ruggedized device design

that HEXFET power MOSFETs are well known for,

provides the designer with an extremely efficient device

for use in a wide variety of applications.

These devices are well-suited for applications such

as switching power supplies, motor controls, invert-

ers, choppers, audio amplifiers and high-energy pulse

circuits.

SMD-1

Features:

n Low RDS(on)

n Avalanche Energy Ratings

n Dynamic dv/dt Rating

n Simple Drive Requirements

n Ease of Paralleling

n Hermetically Sealed

n Surface Mount

n Light Weight

PD - 94235A

Podobny numer części - IRF5N3710

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International Rectifier	IRF5N3710	118Kb / 7P	Avalanche Energy Ratings
International Rectifier	IRF5N3710	118Kb / 7P	Avalanche Energy Ratings

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International Rectifier	IRCZ44	132Kb / 6P	Power MOSFET(Vdss=60V, Rds(on)=0.028ohm, Id=50A)
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	IRF5Y540CM	99Kb / 7P	POWER MOSFET N-CHANNEL(Vdss=100V, Rds(on)=0.058ohm, Id=18A*)
	IRFN3710	132Kb / 4P	TRANSISTOR N-CHANNEL(BVdss=100V, Rds(on)=0.028ohm, Id=45A)
	IRFP044	170Kb / 6P	Power MOSFET(Vdss=60V, Rds(on)=0.028ohm, Id=57A)
	IRFZ44R	153Kb / 8P	Power MOSFET(Vdss=60V, Rds(on)=0.028ohm, Id=50*A)
	IRLZ44	169Kb / 6P	Power MOSFET(Vdss=60V, Rds(on)=0.028ohm, Id=50*A)
	IRLZ44S	282Kb / 6P	Power MOSFET(Vdss=60V, Rds(on)=0.028ohm, Id=50*A)

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