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SCG3019 Arkusz danych(PDF) 1 Page - SeCoS Halbleitertechnologie GmbH |
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SCG3019 Arkusz danych(HTML) 1 Page - SeCoS Halbleitertechnologie GmbH |
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1 / 3 page ![]() Elektronische Bauelemente SCG3019 N-Channel Enhancement MOSFET 18-Dec-2013 Rev. B Page 1 of 3 http://www.SeCoSGmbH.com/ Any changes of specification will not be informed individually. SOT-523 KN Top View RoHS Compliant Product A suffix of “-C” specifies halogen & lead-free FEATURES Low on-resistance. Fast switching speed. Low voltage drive makes this device ideal for portable equipment. Easily designed drive circuits. Easy to parallel. Marking PACKAGE INFORMATION Package MPQ Leader Size SOT-523 3K 7 inch MAXIMUM RATINGS (TA=25℃ unless otherwise specified) PARAMETER SYMBOL RATING UNIT Drain-Source Voltage VDSS 30 V Gate-Source Voltage VGSS ±20 V Continuous Drain Current ID 0.1 A Total Power Dissipation PD 0.15 W Operating Junction Temperature Range TJ 150 °C Operating Storage Temperature Range TSTG -55~150 °C Thermal Resistance, Junction to Ambient RθJA 833 °C / W Top View A L M C B D G H J F K E 1 2 3 1 2 3 Millimeter Millimeter REF. Min. Max. REF. Min. Max. A 1.5 1.7 G - 0.1 B 1.45 1.75 H 0.55 REF. C 0.7 0.9 J 0.1 0.2 D 0.7 0.9 K - E 0.9 1.1 L 0.5 TYP. F 0.15 0.35 M 0.25 0.325 |
Podobny numer części - SCG3019 |
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Podobny opis - SCG3019 |
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