IRF7705 datasheet(1/8 Pages) IRF

Numer części	IRF7705

Szczegółowy opis	Power MOSFET(Vdss=-30V)

PDF	8 Pages

Scroll/Zoom	100%

Producent	IRF [International Rectifier]

Strona internetowa	http://www.irf.com

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HEXFET® Power MOSFET

HEXFET® power MOSFETs from International Rectifier

utilize advanced processing techniques to achieve ex-

tremely low on-resistance per silicon area. This benefit,

combined with the ruggedized device design, that Inter-

national Rectifier is well known for,

provides the de-

signer with an extremely efficient and reliable device

for use in battery and load management.

The TSSOP-8 package has 45% less footprint area than

the standard SO-8. This makes the TSSOP-8 an ideal

device for applications where printed circuit board space

is at a premium. The low profile (<1.2mm) allows it to fit

easily into extremely thin environments such as portable

electronics and PCMCIA cards.

IRF7705

Description

l Ultra Low On-Resistance

l P-Channel MOSFET

l Very Small SOIC Package

l Low Profile ( < 1.2mm)

l Available in Tape & Reel

TSSOP-8

Parameter

Max.

Units

VDS

Drain- Source Voltage

-30

V

ID @ TC = 25°C

Continuous Drain Current, VGS @ -10V

-8.0

ID @ TC = 70°C

Continuous Drain Current, VGS @ -10V

-6.0

A

IDM

Pulsed Drain Current

-30

PD @TC = 25°C

Power Dissipation

1.5

PD @TC = 70°C

Power Dissipation

0.96

Linear Derating Factor

0.012

W/°C

VGS

Gate-to-Source Voltage

± 20

V

TJ, TSTG

Junction and Storage Temperature Range

-55 to + 150

°C

Parameter

Max.

Units

RθJA

Maximum Junction-to-Ambient

83

°C/W

Thermal Resistance

Absolute Maximum Ratings

W

www.irf.com

1

06/05/01

PD - 94001A

VDSS

RDS(on) max (mΩ)

Ω)

ID

-30V

18 @VGS = -10V

-8.0A

30 @VGS = -4.5V

-6.0A

4 = G

3 = S

2 = S

1 = D

1

2

3

4

G

D

S

5

6

7

8

8 = D

7 = S

6 = S

5 = D

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IRF7705 Arkusz danych(PDF) 1 Page - International Rectifier

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