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Zakładka z wyszukiwarką danych komponentów |
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Zakładka z wyszukiwarką danych komponentów |
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IRFD320 Arkusz danych(PDF) 2 Page - International Rectifier |
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IRFD320 Arkusz danych(HTML) 2 Page - International Rectifier |
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2 / 8 page  Parameter Min. Typ. Max. Units Conditions V(BR)DSS Drain-to-Source Breakdown Voltage 400 — — V VGS = 0V, ID = 250µA ∆V(BR)DSS/∆TJ Breakdown Voltage Temp. Coefficient — 0.51 — V/°C Reference to 25°C, ID = 1mA RDS(on) Static Drain-to-Source On-Resistance — — 1.8 VGS = 10.0V, ID = 0.21A — — VGS = V, ID = A VGS(th) Gate Threshold Voltage 2.0 — 4.0 V VDS = VGS, ID = 250µA gfs Forward Transconductance 1.7 — — S VDS = 50V, ID = 1.2A IDSS Drain-to-Source Leakage Current — — 25 VDS = 400V, VGS = 0V — — 250 VDS = 320V, VGS = 0V, TJ = 125°C IGSS Gate-to-Source Forward Leakage — — 100 VGS = 20V Gate-to-Source Reverse Leakage — — -100 VGS = -20V Qg Total Gate Charge — — 20 ID = 2.0A Qgs Gate-to-Source Charge — — 3.3 nC VDS = 320V Qgd Gate-to-Drain ("Miller") Charge — — 11 VGS = 10V, See Fig. 6 and 13 td(on) Turn-On Delay Time — 10 — VDD = 200V tr Rise Time — 14 — ID = 3.3A td(off) Turn-Off Delay Time — 30 — RG = 18Ω tf Fall Time — 13 — RD = 56Ω, See Fig. 10 LD Internal Drain Inductance — 4.0 — Between lead, 6mm (0.25in.) LS Internal Source Inductance — 6.0 — from package and center of die contact Ciss Input Capacitance — 410 — VGS = 0V Coss Output Capacitance — 120 — pF VDS = 25V Crss Reverse Transfer Capacitance — 47 — ƒ = 1.0MHz, See Fig. 5 IRFD320 Notes: Parameter Min. Typ. Max. Units Conditions IS Continuous Source Current MOSFET symbol (Body Diode) showing the ISM Pulsed Source Current integral reverse (Body Diode) p-n junction diode. VSD Diode Forward Voltage — — 1.6 V TJ = 25°C, IS = 0.49A, VGS = 0V trr Reverse Recovery Time — 270 600 ns TJ = 25°C, IF = 3.3A Qrr Reverse RecoveryCharge — 1.4 3.0 µC di/dt = 100A/µs ton Forward Turn-On Time Repetitive rating; pulse width limited by max. junction temperature. ( See fig. 11 ) VDD = 50V, starting TJ = 25°C, L = 21mH RG = 25Ω, IAS = 2.0A. (See Figure 12) ISD ≤ 2.0A, di/dt ≤ 40A/µs, VDD ≤ V(BR)DSS, TJ ≤ 150°C Pulse width ≤ 300µs; duty cycle ≤ 2%. Source-Drain Ratings and Characteristics Electrical Characteristics @ TJ = 25°C (unless otherwise specified) Intrinsic turn-on time is negligible (turn-on is dominated by LS+LD) — — 3.9 — — 0.49 A ns nA Ω µA nH Next Data Sheet Index Previous Datasheet To Order |
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