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Zakładka z wyszukiwarką danych komponentów |
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Zakładka z wyszukiwarką danych komponentów |
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IRFP044N Arkusz danych(PDF) 1 Page - International Rectifier |
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IRFP044N Arkusz danych(HTML) 1 Page - International Rectifier |
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1 / 8 page  IRFP044N HEXFET® Power MOSFET PD - 9.1410A Fifth Generation HEXFETs from International Rectifier utilize advanced processing techniques to achieve extremely low on-resistance per silicon area. This benefit, combined with the fast switching speed and ruggedized device design that HEXFET Power MOSFETs are well known for, provides the designer with an extremely efficient and reliable device for use in a wide variety of applications. The TO-247 package is preferred for commercial-industrial applications where higher power levels preclude the use of TO-220 devices. The TO-247 is similar but superior to the earlier TO-218 package because of its isolated mounting hole. S D G VDSS = 55V RDS(on) = 0.020Ω ID = 53A l Advanced Process Technology l Dynamic dv/dt Rating l 175°C Operating Temperature l Fast Switching l Fully Avalanche Rated Description TO-247AC Parameter Max. Units ID @ TC = 25°C Continuous Drain Current, VGS @ 10V 53 ID @ TC = 100°C Continuous Drain Current, VGS @ 10V 37 A IDM Pulsed Drain Current
180 PD @TC = 25°C Power Dissipation 120 W Linear Derating Factor 0.77 W/°C VGS Gate-to-Source Voltage ± 20 V EAS Single Pulse Avalanche Energy
230 mJ IAR Avalanche Current 28 A EAR Repetitive Avalanche Energy 12 mJ dv/dt Peak Diode Recovery dv/dt
5.0 V/ns TJ Operating Junction and -55 to + 175 TSTG Storage Temperature Range Soldering Temperature, for 10 seconds 300 (1.6mm from case ) °C Mounting torque, 6-32 or M3 screw 10 lbf•in (1.1N•m) Absolute Maximum Ratings Parameter Typ. Max. Units RθJC Junction-to-Case ––– 1.3 RθCS Case-to-Sink, Flat, Greased Surface 0.24 ––– °C/W RθJA Junction-to-Ambient ––– 40 Thermal Resistance 8/25/97 |
Podobny numer części - IRFP044N |
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Podobny opis - IRFP044N |
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