IRFP460LC datasheet(1/8 Pages) IRF

Numer części	IRFP460LC

Szczegółowy opis	Power MOSFET(Vdss=500V, Rds(on)=0.27ohm, Id=20A)

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Producent	IRF [International Rectifier]

Strona internetowa	http://www.irf.com

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IRFP460LC

HEXFET® Power MOSFET

PD - 9.1232

Revision 0

VDSS = 500V

RDS(on) = 0.27Ω

ID = 20A

Ultra Low Gate Charge

Reduced Gate Drive Requirement

Enhanced 30V Vgs Rating

Reduced Ciss, Coss, Crss

Isolated Central Mounting Hole

Dynamic dv/dt Rated

Repetitive Avalanche Rated

Absolute Maximum Ratings

Parameter

Max.

Units

ID @ TC = 25°C

Continuous Drain Current, V GS @ 10V

20

ID @ TC = 100°C

Continuous Drain Current, V GS @ 10V

12

A

IDM

Pulsed Drain Current

80

PD @TC = 25°C

Power Dissipation

280

W

Linear Derating Factor

2.2

W/°C

VGS

Gate-to-Source Voltage

±30

V

EAS

Single Pulse Avalanche Energy

960

mJ

IAR

Avalanche Current

20

A

EAR

Repetitive Avalanche Energy

28

mJ

dv/dt

Peak Diode Recovery dv/dt

3.5

V/ns

TJ

Operating Junction and

-55 to + 150

TSTG

Storage Temperature Range

°C

Soldering Temperature, for 10 seconds

300 (1.6mm from case)

Mounting torque, 6-32 or M3 screw.

10 lbf•in (1.1N•m)

Parameter

Min.

Typ.

Max.

Units

RθJC

Junction-to-Case

––––

0.45

RθCS

Case-to-Sink, Flat, Greased Surface

––––

0.24

––––

°C/W

RθJA

Junction-to-Ambient

––––

40

Thermal Resistance

Description

This new series of Low Charge HEXFET Power MOSFETs achieve significantly

lower gate charge over conventional MOSFETs.

Utilizing advanced Hexfet

technology the device improvements allow for reduced gate drive requirements,

faster switching speeds and increased total system savings.

These device

improvements combined with the proven ruggedness and reliability of HEXFETs

offer the designer a new standard in power transistors for switching applications.

The TO-247 package is preferred for commercial-industrial applications where

higher power levels preclude the use of TO-220 devices. The TO-247 is similar

but superior to the earlier TO-218 package because of its isolated mounting hole.

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Podobny numer części - IRFP460LC

Producent	Numer części	Arkusz danych	Szczegółowy opis
Vishay Siliconix	IRFP460LC	1Mb / 8P	Power MOSFET 28-Jul-08
Inchange Semiconductor ...	IRFP460LC	171Kb / 2P	isc N-Channel MOSFET Transistor
Vishay Siliconix	IRFP460LC	1Mb / 9P	Power MOSFET 28-Jul-08
Vishay Siliconix	IRFP460LC	383Kb / 11P	Power MOSFET 31-Jan-2022
International Rectifier	IRFP460LCPBF	181Kb / 8P	HEXFET Power MOSFET

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Podobny opis - IRFP460LC

Producent	Numer części	Arkusz danych	Szczegółowy opis
International Rectifier	IRF460	140Kb / 7P	TRANSISTORS N-CHANNEL(Vdss=500V, Rds(on)=0.27ohm, Id=21)
	IRF7504	115Kb / 8P	Power MOSFET(Vdss=-20V, Rds(on)=0.27ohm)
	IRFD120	176Kb / 6P	Power MOSFET(Vdss=100V, Rds(on)=0.27ohm, Id=1.3A)
	IRFI460	211Kb / 8P	TRANSISTOR N-CHANNEL(Vdss=500V, Rds(on)=0.27ohm, Id=21A)
	IRFP460	163Kb / 6P	Power MOSFET(Vdss=500V, Rds(on)=0.27ohm, Id=20A)
	IRFP460A	95Kb / 8P	Power MOSFET(Vdss=500V, Rds(on)max=0.27ohm, Id=20A)
	IRFP460AS	115Kb / 8P	Power MOSFET(Vdss=500V, Rds(on)max=0.27ohm, Id=20A)
	IRFP460N	94Kb / 8P	Power MOSFET(Vdss=500V, Rds(on)max=0.24ohm, Id=20A)
	IRFP460P	174Kb / 8P	Power MOSFET(Vdss=500V, Rds(on)=0.27ohm, Id=20A)
	IRFP460APBF	195Kb / 9P	SMPS MOSFET ( VDSS=500V , RDS(on)max=0.27廓 , ID=20A )

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