SSP7481P_15 datasheet(2/2 Pages) SECOS

2 / 2 page

Elektronische Bauelemente

SSP7481P

-6.7 A, -80 V, RDS(ON) 75 m

P-Channel Enhancement MOSFET

18-Sep-2013 Rev. B

Page 2 of 2

http://www.SeCoSGmbH.com/

Any changes of specification will not be informed individually.

ELECTRICAL CHARACTERISTICS (TA=25°C unless otherwise specified)

Parameter

Symbol

Min.

Typ.

Max.

Unit

Teat Conditions

Static

Drain-Source Breakdown Voltage

V(BR)DSS

-30

VGS= 0V, ID = -250μA

Gate-Threshold Voltage

VGS(th)

-1

VDS = VGS, ID = -250μA

Gate-Body Leakage

IGSS

100

VDS = 0V, VGS= ±20V

-1

VDS = -64V, VGS= 0V

Zero Gate Voltage Drain Current

IDSS

-5

μA

VDS = -64V, VGS= 0V, TJ=55°C

On-State Drain Current

ID(ON)

-50

VDS = -5V, VGS= -10V

VGS= -10V, ID = -6.7A

Drain-Source On-Resistance

RDS(ON)

mΩ

VGS= -4.5V, ID = -6.1A

Forward Transconductance

gFS

VDS= -15V,,ID = -6.7A

Diode Forward Voltage

VSD

-0.8

IS= 2.5A, VGS= 0V

Dynamic

Total Gate Charge

Gate-Source Charge

Qgs

Gate-Drain Charge

Qgd

ID= -6.7A

VDS= -15V

VGS= -5V

Turn-On Delay Time

Td(ON)

Rise Time

Turn-Off Delay Time

Td(OFF)

100

Fall Time

ID= -1A, VDD= -15V

VGEN= -10V

RL= 6Ω

Notes

Pulse test：PW ≦ 300 us duty cycle ≦ 2%.

Guaranteed by design, not subject to production testing.

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