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Zakładka z wyszukiwarką danych komponentów |
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Zakładka z wyszukiwarką danych komponentów |
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IRF7350 Arkusz danych(PDF) 2 Page - International Rectifier |
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IRF7350 Arkusz danych(HTML) 2 Page - International Rectifier |
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2 / 16 page  IRF7350 2 www.irf.com Repetitive rating; pulse width limited by max. junction temperature. Notes: Pulse width ≤ 400µs; duty cycle ≤ 2%. Surface mounted on 1 in square Cu board N channel: Starting T J = 25°C, L = 4.0mH, RG = 25Ω, IAS = 4.2A P channel: Starting TJ = 25°C, L = 11mH, RG = 25Ω, IAS = -3.0A Parameter Min. Typ. Max. Units Conditions N-Ch 100 —— VGS = 0V, ID = 250µA P-Ch -100 —— VGS = 0V, ID = -250µA N-Ch — 0.12 — Reference to 25°C, ID = 1mA P-Ch — -0.11 — Reference to 25°C, ID = -1mA N-Ch 2.0 — 4.0 VDS = VGS, ID = 250µA P-Ch -2.0 — -4.0 VDS = VGS, ID = -250µA N-Ch 2.4 —— VDS = 50V, ID = 2.1A P-Ch 1.1 —— VDS = -50V, ID = -1.5A N-Ch —— 25 VDS = 100V, VGS = 0V P-Ch —— -25 VDS = -100V, VGS = 0V N-Ch —— 250 VDS = 80 V, VGS = 0V, TJ = 70°C P-Ch —— -250 VDS = -80V, VGS = 0V, TJ = 70°C IGSS Gate-to-Source Forward Leakage N-P –– — ±100 VGS = ± 20V N-Ch — 19 28 P-Ch — 21 31 N-Ch — 3.0 4.5 P-Ch — 3.4 5.1 N-Ch — 8.8 13 P-Ch — 10 16 N-Ch — 6.7 — P-Ch — 25 — N-Ch — 11 — P-Ch — 13 — N-Ch — 35 — P-Ch — 30 — N-Ch — 20 — P-Ch — 40 — N-Ch — 380 — P-Ch — 360 — N-Ch — 100 — P-Ch — 110 — N-Ch — 54 — P-Ch — 65 — V(BR)DSS Drain-to-Source Breakdown Voltage ∆V (BR)DSS/∆TJ Breakdown Voltage Temp. Coefficient RDS(ON) Static Drain-to-Source On-Resistance VGS(th) Gate Threshold Voltage gfs Forward Transconductance IDSS Drain-to-Source Leakage Current Qg Total Gate Charge Qgs Gate-to-Source Charge Qgd Gate-to-Drain ("Miller") Charge td(on) Turn-On Delay Time tr Rise Time td(off) Turn-Off Delay Time tf Fall Time Ciss Input Capacitance Coss Output Capacitance Crss Reverse Transfer Capacitance Electrical Characteristics @ TJ = 25°C (unless otherwise specified) V V/°C Ω V S µA nC ns pF N-Channel ID = 2.1A, VDS = 80V, VGS = 10V P-Channel ID = -1.5A, VDS = -80V, VGS = -10V N-Channel VDD = 50V, ID = 1.0A, RG = 22Ω, RD = 50Ω, VGS = 10V P-Channel VDD = -50V, ID = -1.0A, RG = 22Ω, RD = 50Ω, VGS = -10V P-Channel VGS = 0V, VDS = -25V, ƒ = 1.0MHz P-Ch Parameter Min. Typ. Max. Units Conditions N-Ch —— 1.8 P-Ch —— -1.4 N-Ch —— 8.4 P-Ch —— -6.0 N-Ch —— 1.3 TJ = 25°C, IS = 1.8A, VGS = 0V P-Ch —— -1.6 TJ = 25°C, IS = -1.4A, VGS = 0V N-Ch — 72 110 P-Ch — 77 120 N-Ch — 205 310 P-Ch — 240 360 Source-Drain Ratings and Characteristics IS Continuous Source Current (Body Diode) ISM Pulsed Source Current (Body Diode) VSD Diode Forward Voltage trr Reverse Recovery Time Qrr Reverse Recovery Charge A V ns nC N-Channel TJ = 25°C, IF = 1.8A, di/dt = 100A/µs P-Channel TJ = 25°C, IF = -1.4A, di/dt = -100A/µs N-Ch — VGS = 10V, ID = 2.1A 0.21 — — — 0.48 VGS = -10V, ID = -1.5A N-Channel VGS = 0V, VDS = 25V, ƒ = 1.0MHz |
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