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AN2052 Arkusz danych(PDF) 4 Page - STMicroelectronics |
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AN2052 Arkusz danych(HTML) 4 Page - STMicroelectronics |
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4 / 13 page ![]() Test results AN2052 4/13 DocID10909 Rev 2 Figure 3. FM configuration “B”, time average at 200 kHz, 43.92 dBuV/m As shown in Figure 1, 2 and 3, using the FM technique, an improvement is obtained. When frequencies are lower than 1 MHz, the device switching is the primary noise generator. Using the configuration “A” or “B”, a 5 dBuV/m drop is obtained for frequencies lower than 200 kHz. Between 1 MHz and 10 MHz, both configurations “A” and “B” make a dramatic drop bigger than 15 dBuV/m. Above 10 MHz, FM technique benefits are reduced and capacitive coupling between copper tracks in PCB is dominant. Table 1. EMI comparison between original “A” and “B” configurations <1 MHz 1 MHz to10 MHz >10 MHz Original Marginally pass Pass Enough margin “A” Pass More margin Enough margin “B” More margin More margin Enough margin |
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