 |
Zakładka z wyszukiwarką danych komponentów |
|
|
Zakładka z wyszukiwarką danych komponentów |
|
AN3994 Arkusz danych(PDF) 21 Page - STMicroelectronics |
|
|
|||||||||||||||||||||||||||||
AN3994 Arkusz danych(HTML) 21 Page - STMicroelectronics |
|
|
21 / 53 page  AN3994 MD II and MD V: which is the lowest loss one? Doc ID 022380 Rev 1 21/53 6 MD II and MD V: which is the lowest loss one? A dynamic on bench comparison has been carried out on four different MD V/MD II MOSFET couples in order to provide a reliable idea of their dynamic performances. All tests have been issued by the same simple clamped inductive load test circuit (refer to Figure 7) where the effects of parasitic elements have been reduced in order to make the effective MOSFET behavior more understandable. A 600 V,10 A SiC diode has been used as the clamp diode. The matches obtained under evaluation are those displayed in Table 1. The following graphs show the energy ON, the energy OFF, the di/dt, the dv/dt both at turn-on and turn-off of each compared match for different RG values, and two ID current levels. 6.1 STB42N65M5 vs. STW48NM60N Figure 18. STB42N65M5 vs. STW48NM60N Eon @ 8 A/16 A, 400 V Figure 19. STB42N65M5 vs. STW48NM60N di/dt at turn-on @ 8 A/16 A, 400 V |
|
Link URL |
| Czy Alldatasheet okazała się pomocna? [ DONATE ] |
O Alldatasheet | Reklama | Kontakt | Polityka prywatności | Link do karty katalogowej | Linki | Lista producentów All Rights Reserved©Alldatasheet.com |
| Russian : Alldatasheetru.com | Korean : Alldatasheet.co.kr | Spanish : Alldatasheet.es | French : Alldatasheet.fr | Italian : Alldatasheetit.com Portuguese : Alldatasheetpt.com | Polish : Alldatasheet.pl | Vietnamese : Alldatasheet.vn Indian : Alldatasheet.in | Mexican : Alldatasheet.com.mx | British : Alldatasheet.co.uk | New Zealand : Alldatasheet.co.nz |
|
Family Site : ic2ic.com |
icmetro.com |
Polish ▼
English
Chinese
German
Japanese
Russian
Korean
Spanish
French
Italian
Portuguese
Polish
Vietnamese
Indian
Mexican
British
New Zealand
