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AN533 Arkusz danych(PDF) 4 Page - STMicroelectronics

Numer części AN533
Szczegółowy opis  The behavior of a semiconductor device depends
PDF  22 Pages
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Producent  STMICROELECTRONICS [STMicroelectronics]
Strona internetowa  http://www.st.com
Logo STMICROELECTRONICS - STMicroelectronics

AN533 Arkusz danych(HTML) 4 Page - STMicroelectronics

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Figure 1.
RMS and average currents
1.1.3
Dissipated power in a TRIAC
A TRIAC is made up of two thyristors connected back to back. This means we consider the
sum of the dissipated power of both thyristors.
The following formula gives the total dissipated power versus IT(RMS) current through the
TRIAC (see Figure 1 C with t0 = 0):
For a phase angle conduction the RMS current is given in Figure 1 C.
1.1.4
TRIAC without external heatsink
Figure 2 shows the thermal equivalent diagram for a TRIAC without external heatsink.
In practice the imposed parameters are:
Ta: ambient air temperature where the TRIAC is located
Rth(j-a): thermal resistance between junction and ambient air given in the datasheet
P: dissipated power in the TRIAC depending on the used TRIAC and on the load
current
The following equation defines the junction temperature depending on these parameters:
Tj = P . Rth(j-a) + Ta
Ip
A
B
C
Ip
Ip
t0
T/2
T/2
T
T
T
t0
t
t
t
IT(AV) =
2 . Ip .t0
.T
π
IT(AV) =
IT(AV) =
1 -
+
. sin
2 . Ip
π
2 . Ip .
I T(RMS) =
²
Ip²
2
T
0
IT(AV) =
i(t)dt
1
T
I T(RMS) =
²
i²(t)dt
T
0
1
T
I T(RMS) =
²
Ip².t0
2 . T
I T(RMS) =
²
Ip
2
²
1
2 .
π
2 . t0
T
4 . . t0
T
π
(
( (
(
(
(
cos
t0 .
²
π
T
π
P =
2 .
2
π
.IT(RMS) .Vt0 + Rd .I T(RMS)
2



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