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LTC4232 Arkusz danych(PDF) 3 Page - Linear Technology |
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LTC4232 Arkusz danych(HTML) 3 Page - Linear Technology |
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3 / 16 page ![]() LTC4232 3 4232fb For more information www.linear.com/LTC4232 SYMBOL PARAMETER CONDITIONS MIN TYP MAX UNITS Inputs IIN OV, UV, FB Pin Input Current V = 1.2V l 0 ±1 µA VTH OV, UV, FB Pin Threshold Voltage VPIN Rising l 1.21 1.235 1.26 V ∆VOV(HYST) OV Pin Hysteresis l 10 20 30 mV ∆VUV(HYST) UV Pin Hysteresis l 50 80 110 mV VUV(RTH) UV Pin Reset Threshold Voltage VUV Falling l 0.55 0.62 0.7 V ∆VFB(HYST) FB Pin Power Good Hysteresis l 10 20 30 mV RISET ISET Pin Internal Resistor l 19 20 21 kΩ Outputs VINTVCC INTVCC Output Voltage VDD = 5V, 15V, ILOAD = 0mA, –10mA l 2.8 3.1 3.3 V VOL PG, FLT Pin Output Low Voltage I = 2mA l 0.4 0.8 V IOH PG, FLT Pin Input Leakage Current V = 30V l 0 ±10 µA VTIMER(H) TIMER Pin High Threshold VTIMER Rising l 1.2 1.235 1.28 V VTIMER(L) TIMER Pin Low Threshold VTIMER Falling l 0.1 0.21 0.3 V ITIMER(UP) TIMER Pin Pull-Up Current VTIMER = 0V l –80 –100 –120 µA ITIMER(DN) TIMER Pin Pull-Down Current VTIMER = 1.2V l 1.4 2 2.6 µA ITIMER(RATIO) TIMER Pin Current Ratio ITIMER(DN)/ITIMER(UP) l 1.6 2 2.7 % AIMON IMON Pin Current Gain IOUT = 2.5A l 18.5 20 21.5 µA/A IOFF(IMON) IMON Pin Offset Current IOUT = 150mA l 0 ±4.5 µA IGATE(UP) Gate Pull-Up Current Gate Drive On, VGATE = VOUT = 12V l –18 –24 –29 µA IGATE(DN) Gate Pull-Down Current Gate Drive Off, VGATE = 18V, VOUT = 12V l 180 250 400 µA IGATE(FST) Gate Fast Pull-Down Current Fast Turn Off, VGATE = 18V, VOUT = 12V 140 mA AC Characteristics tPHL(GATE) Input High (OV), Input Low (UV) to Gate Low Propagation Delay VGATE < 16.5V Falling l 8 10 µs tPHL(ILIM) Short-Circuit to Gate Low VFB = 0, Step ISENSE to 6A, VGATE < 15V Falling l 1 5 µs tD(ON) Turn-On Delay Step VUV to 2V, VGATE > 13V l 50 100 150 ms tD(CB) Circuit Breaker Filter Delay Time (Internal) VFB = 0V, Step ISENSE to 3A l 1.3 2 2.7 ms tD(AUTO-RETRY) Auto-Retry Turn-On Delay (Internal) l 50 100 150 ms Note 1: Stresses beyond those listed under Absolute Maximum Ratings may cause permanent damage to the device. Exposure to any Absolute Maximum Rating condition for extended periods may affect device reliability and lifetime. Note 2: All currents into pins are positive, all voltages are referenced to GND unless otherwise specified. Note 3: An internal clamp limits the GATE pin to a maximum of 6.5V above OUT. Driving this pin to voltages beyond the clamp may damage the device. Note 4: This IC includes overtemperature protection that is intended to protect the device during momentary overload conditions. Junction temperature will exceed 125°C when overtemperature protection is active. Continuous operation above the specified maximum operating junction temperature may impair device reliability. Note 5: TJ is calculated from the ambient temperature, TA, and power dissipation, PD, according to the formula: TJ = TA + (PD • 46°C/W) ELECTRICAL CHARACTERISTICS The l denotes those specifications which apply over the full operating temperature range, otherwise specifications are at TA = 25°C. VDD = 12V unless otherwise noted. |
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