MMBTA13 datasheet(1/2 Pages) KEC

Numer części	MMBTA13

Szczegółowy opis	EPITAXIAL PLANAR NPN TRANSISTOR (GENERAL PURPOSE, DARLINGTON TRANSISTOR)

PDF	2 Pages

Scroll/Zoom	100%

Producent	KEC [KEC(Korea Electronics)]

Strona internetowa	http://www.keccorp.com

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1 / 2 page

1999. 11. 30

1/2

SEMICONDUCTOR

TECHNICAL DATA

MMBTA13/14

EPITAXIAL PLANAR NPN TRANSISTOR

Revision No : 4

GENERAL PURPOSE APPLICATION.

DARLINGTON TRANSISTOR.

MAXIMUM RATING (Ta=25 )

DIM

MILLIMETERS

1. EMITTER

2. BASE

3. COLLECTOR

SOT-23

A

B

C

D

E

2.93 0.20

1.30+0.20/-0.15

0.45+0.15/-0.05

2.40+0.30/-0.20

G

1.90

H

J

K

L

M

N

0.95

0.13+0.10/-0.05

0.00 ~ 0.10

0.55

0.20 MIN

1.00+0.20/-0.10

M

E

1

2

3

B

1.30 MAX

LL

PP

P7

+_

ELECTRICAL CHARACTERISTICS (Ta=25 )

*Pulse Test : Pulse Width 300 S, Duty Cycle 2.0%

* : Package Mounted On 99.5% Alumina 10 8 0.6mm.

MARK SPEC

Type Name

Marking

Lot No.

AX

TYPE

MMBTA13

MMBTA14

MARK

AIX

AHX

CHARACTERISTIC

SYMBOL

TEST CONDITION

MIN.

TYP.

MAX.

UNIT

Collector-Emitter Breakdown Voltage

VCES

IC=0.1mA

30

-

V

Emitter Cut-off Current

ICBO

VCB=30V

-

100

nA

Emitter Cut-off Current

IEBO

VEB=10V

-

100

nA

DC Current Gain

MMBTA13

hFE *

IC=10mA, VCE=5V

5,000

-

MMBTA14

10,000

-

MMBTA13

IC=100mA, VCE=5V

10,000

-

MMBTA14

20,000

-

Collector-Emitter Saturation Voltage

VCE(sat)

IC=100mA, IB=0.1mA

-

1.5

V

Base-Emitter Voltage

VBE

IC=100mA, VCE=5V

-

2.0

V

Current Gain Bandwith Product

fT

IC=10mA, f=100MHz, VCE=5V

125

-

MHz

CHARACTERISTIC

SYMBOL

RATING

UNIT

Collector-Base Voltage

VCBO

30

V

Collector-Emitter Voltage

VCES

30

V

Emitter-Base Voltage

VEBO

10

V

Collertor Current

IC

500

mA

Collector Power Dissipation

PC *

350

mW

Junction Temperature

Tj

150

Storage Temperature Range

Tstg

-55 150

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