06.10.2010

LED22-PR

1 of 2

LED22-PR

TECHNICAL DATA

Mid-Infrared Light Emitting Diode

Light Emitting Diodes with central wavelength 2.25 µm series are based on heterostructures grown

on GaSb substrates. They are developed for using in optical gas sensors and medical diagnostics.

LED22-PR has a stable ouput power and a lifetime more then 80000 hours.

Features

• Structure: GaInAsSb/AlGaAsSb

• Peak Wavelength: typ. 2.25 µm

• Optical Ouput Power: typ. 1.1 mW qCW

• Package: TO-18, with PR and without window

Specifications

Rating

Item

Condition

Min.

Typ.

Max.

Unit

Peak Wavelength

T=300 K

2.20

2.25

2.29

µm

FWHM

150 mA CW

150

200

250

nm

Quasi-CW

Optical Power

200 mA qCW

0.9

1.1

1.3

mW

Pulsed

Optical Power

1 A

25

28

30

mW

Switching Time

T=300 K

10

30

50

ns

Operation Voltage

200 mA qCW

V

Operating

Temperature

-240 … +50

°C

Emitting Area

300x300

µm

Soldering

Temperature

180

°C

Package

TO-18, with parabolic reflector and

without window

(Unit: mm)

Operating Regime

Quasi-CW

•

Maximum current 220 mA

•

Recommended current 150-200mA

Pulsed

•

Maximum current 1 A

(puls lenght 500 ns, repetition rate 2kHz)