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LED760 Arkusz danych(PDF) 1 Page - Roithner LaserTechnik GmbH |
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LED760 Arkusz danych(HTML) 1 Page - Roithner LaserTechnik GmbH |
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1 / 8 page ![]() 30.11.2011 LED760-series 1 of 8 LED760-series TECHNICAL DATA Infrared LED AlGaAs LED760-series are AlGaAs LEDs mounted on a lead frame and encapsulated in various types of epoxy lens, which offers different design settings. On forward bias, it emits a high power radiation of typical 19 mW at a peak wavelength at 760 nm. Specifications • Structure: AlGaAs • Peak Wavelength: typ. 760 nm • Optical Ouput Power: typ. 19 mW • Resin Material: Epoxy resin • Solder: Lead free Absolute Maximum Ratings (Ta=25°C) Type Symbol Value Unit Power Dissipation PD 200 mW Forward Current IF 100 mA Pulse Forward Current IFP 500 mA Reverse Voltage VR 5 V Operating Temperature TOP -30 … +85 °C Storage Temperature TSTG -40 … +100 °C Soldering Temperature (for 5 sec.) TSOL 265 °C Electro-Optical Characteristics (Ta=25°C) Item Symbol Condition Min. Typ. Max. Unit Forward Voltage VF IF = 50 mA - 1.8 2.2 V Reverse Current IR VR = 5 V - - 10 µA Radiated Power PO IF = 50 mA 14 19 - mW Peak Wavelength λ P IF = 50 mA - 760 - nm Half Width Δλ IF = 50 mA - 30 - nm Rise Time tr IF = 50 mA - 50 - ns Fall Time tf IF = 50 mA - 25 - ns |
Podobny numer części - LED760 |
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Podobny opis - LED760 |
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