18.08.2010

led870_01up.doc

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LED870-01UP

(LN870-01UP) Infrared LED Lamp

LED870-01UP is an AlGaAs LED mounted on a lead frame with a clear epoxy lens.

On forward bias, it emits a spectral band of radiation which peaks at 870 nm.

Specifications

Outer dimension

（Unit: mm）

1)Product Name

Infrared LED Lamp

2)Type No.

LED870-01UP

3)Chip

(1)Chip Material

AlGaAs

(2)Peak Wavelength 870 nm typ.

4)Package

(1)Type

Φ5mm clear molding

(2)Resin Material

Epoxy Resin

(3)Lead Frame

Soldered

Absolute Maximum Ratings

Item

Symbol

Maximum Rated Value

Unit

Ambient Temperature

Power Dissipation

160

mW

Ta=25°C

Forward Current

100

mA

Ta=25°C

Pulse Forward Current

1000

mA

Ta=25°C

Reverse Voltage

5

V

Ta=25°C

Operating Temperature

-30 ~ +85

°C

Storage Temperature

-30 ~ +100

°C

Soldering Temperature

260

°C

‡

Pulse Forward Current condition: Duty=1% and Pulse Width=10us.

‡

Soldering condition: Soldering condition must be completed within 3 seconds at 260°C

Electro-Optical Characteristics [Ta=25°C

Item

Symbol

Condition

Minimum

Typical

Maximum

Unit

Forward Voltage

1.50

1.70

V

Reverse Current

10

uA

Total Radiated Power

18.0

22.0

mW

Radiant Intensity

60

90

mW/sr

Peak Wavelength

860

870

880

nm

Half Width

Δλ

35

nm

Viewing Half Angle

±10

deg.

Rise Time

ｔｒ

15

ns

Fall Time

ｔｆ

10

ns

‡

Total Radiated Power is measured by Photodyne #500

‡

Radiant Intensity is measured by Tektronix J-6512.