21.11.2011

LED1050-series

1 of 8

LED1050-series

TECHNICAL DATA

Infrared LED

InGaAsP

LED1050-series are InGaAsP LEDs mounted on a lead frame and encapsulated in various types of

epoxy lens, which offers different design settings.

On forward bias, it emits a high power radiation of typical 2 mW at a peak wavelength at 1050 nm.

Specifications

• Structure: InGaAsP

• Peak Wavelength: typ. 1050 nm

• Optical Ouput Power: typ. 2 mW

• Resin Material: Epoxy resin

• Solder: Lead free

Type

Symbol

Value

Unit

Power Dissipation

140

mW

Forward Current

100

mA

Pulse Forward Current

1000

mA

Reverse Voltage

5

V

Operating Temperature

-40 … +85

°C

Storage Temperature

-40 … +100

°C

Soldering Temperature (for 5 sec.)

265

°C

Item

Symbol

Condition

Min.

Typ.

Max.

Unit

Forward Voltage

-

1.2

1.5

V

Reverse Current

-

-

10

µA

Radiated Power

1

2

-

mW

Peak Wavelength

λ

P

1000

1050

1100

nm

Half Width

Δλ

-

50

-

nm

Rise Time

-

10

-

ns

Fall Time

-

10

-

ns