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FMMT494TC Arkusz danych(PDF) 2 Page - Diodes Incorporated

Numer części FMMT494TC
Szczegółowy opis  120V NPN SILICON PLANAR MEDIUM POWER TRANSISTOR IN SOT23
PDF  7 Pages
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Producent  DIODES [Diodes Incorporated]
Strona internetowa  http://www.diodes.com
Logo DIODES - Diodes Incorporated

FMMT494TC Arkusz danych(HTML) 2 Page - Diodes Incorporated

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FMMT494
Document number: DS33095 Rev. 4 - 2
2 of 7
www.diodes.com
October 2012
© Diodes Incorporated
FMMT494
A Product Line of
Diodes Incorporated
Maximum Ratings (@TA = +25°C, unless otherwise specified.)
Characteristic
Symbol
Value
Unit
Collector-Base Voltage
VCBO
140
V
Collector-Emitter Voltage
VCEO
120
V
Emitter-Base Voltage
VEBO
7
V
Continuous Collector Current
IC
1
A
Peak Pulse Current
ICM
2
A
Base Current
IB
200
mA
Thermal Characteristics (@TA = +25°C, unless otherwise specified.)
Characteristic
Symbol
Value
Unit
Power Dissipation (Note 6)
PD
500
mW
Thermal Resistance, Junction to Ambient (Note 6)
RθJA
250
°C/W
Thermal Resistance, Junction to Lead (Note 7)
RθJL
197
°C/W
Operating and Storage Temperature Range
TJ, TSTG
-55 to +150
°C
ESD Ratings (Note 8)
Characteristic
Symbol
Value
Unit
JEDEC Class
Electrostatic Discharge - Human Body Model
ESD HBM
4,000
V
3A
Electrostatic Discharge - Machine Model
ESD MM
≥ 400
V
C
Notes:
6. For a device surface mounted on 15mm X 15mm FR4 PCB with high coverage of single sided 1 oz copper, in still air conditions; the device is measured
when operating in a steady-state condition.
7. Thermal resistance from junction to solder-point (at the end of the collector lead).
8. Refer to JEDEC specification JESD22-A114 and JESD22-A115.



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